Luminescence of InGaN MQWs grown on misorientated GaN substrates

Publisher:
IEEE
Publication Type:
Conference Proceeding
Citation:
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 2010, pp. 135 - 136
Issue Date:
2010-01
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Optoelectronic devices based on InGaN have already been commercialised, however, the Indium content is limited to around 5%. With higher Indium concentration the quantum efficiency decreases, which is thought to be due to increasing inhomogeneity. In thi
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