Luminescence of InGaN MQWs grown on misorientated GaN substrates

Publication Type:
Conference Proceeding
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 2010, pp. 135 - 136
Issue Date:
Full metadata record
Files in This Item:
Filename Description Size
Thumbnail2010003134OK.pdf5.07 MB
Adobe PDF
Optoelectronic devices based on InGaN have already been commercialised, however, the Indium content is limited to around 5%. With higher Indium concentration the quantum efficiency decreases, which is thought to be due to increasing inhomogeneity. In thi
Please use this identifier to cite or link to this item: