Excited-State Optically Detected Magnetic Resonance of Spin Defects in Hexagonal Boron Nitride.

Mu, Z; Cai, H; Chen, D; Kenny, J; Jiang, Z; Ru, S; Lyu, X; Koh, TS; Liu, X; Aharonovich, I; Gao, W

Excited-State Optically Detected Magnetic Resonance of Spin Defects in Hexagonal Boron Nitride.

Mu, Z Cai, H Chen, D Kenny, J Jiang, Z Ru, S Lyu, X Koh, TS Liu, X Aharonovich, I

Gao, W

Permalink

Publisher:: American Physical Society
Publication Type:: Journal Article
Citation:: Physical Review Letters, 2022, 128, (21), pp. 1-6
Issue Date:: 2022-05-27

Closed Access

	Filename	Description	Size
	PhysRevLett.128.216402.pdf		1.83 MB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Mu, Z
dc.contributor.author	Cai, H
dc.contributor.author	Chen, D
dc.contributor.author	Kenny, J
dc.contributor.author	Jiang, Z
dc.contributor.author	Ru, S
dc.contributor.author	Lyu, X
dc.contributor.author	Koh, TS
dc.contributor.author	Liu, X
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.author	Gao, W
dc.date.accessioned	2022-11-17T01:03:39Z
dc.date.available	2022-04-27
dc.date.available	2022-11-17T01:03:39Z
dc.date.issued	2022-05-27
dc.identifier.citation	Physical Review Letters, 2022, 128, (21), pp. 1-6
dc.identifier.issn	0031-9007
dc.identifier.issn	1079-7114
dc.identifier.uri	http://hdl.handle.net/10453/163532
dc.description.abstract	Negatively charged boron vacancy (V_{B}^{-}) centers in hexagonal boron nitride (h-BN) are promising spin defects in a van der Waals crystal. Understanding the spin properties of the excited state (ES) is critical for realizing dynamic nuclear polarization. Here, we report zero-field splitting in the ES of D_{ES}=2160 MHz and its associated optically detected magnetic resonance (ODMR) contrast of 12% at cryogenic temperature. In contrast to nitrogen vacancy (NV^{-}) centers in diamond, the ODMR contrast of V_{B}^{-} centers is more prominent at cryotemperature than at room temperature. The ES has a g factor similar to the ground state. The ES photodynamics is further elucidated by measuring the level anticrossing of the V_{B}^{-} defects under varying external magnetic fields. Our results provide important information for utilizing the spin defects of h-BN in quantum technology.
dc.format	Print
dc.language	eng
dc.publisher	American Physical Society
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation.ispartof	Physical Review Letters
dc.relation.isbasedon	10.1103/PhysRevLett.128.216402
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	01 Mathematical Sciences, 02 Physical Sciences, 09 Engineering
dc.subject.classification	General Physics
dc.title	Excited-State Optically Detected Magnetic Resonance of Spin Defects in Hexagonal Boron Nitride.
dc.type	Journal Article
utslib.citation.volume	128
utslib.location.activity	United States
utslib.for	01 Mathematical Sciences
utslib.for	02 Physical Sciences
utslib.for	09 Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2022-11-17T01:03:37Z
pubs.issue	21
pubs.publication-status	Published
pubs.volume	128
utslib.citation.issue	21

Abstract:

Negatively charged boron vacancy (V_{B}^{-}) centers in hexagonal boron nitride (h-BN) are promising spin defects in a van der Waals crystal. Understanding the spin properties of the excited state (ES) is critical for realizing dynamic nuclear polarization. Here, we report zero-field splitting in the ES of D_{ES}=2160 MHz and its associated optically detected magnetic resonance (ODMR) contrast of 12% at cryogenic temperature. In contrast to nitrogen vacancy (NV^{-}) centers in diamond, the ODMR contrast of V_{B}^{-} centers is more prominent at cryotemperature than at room temperature. The ES has a g factor similar to the ground state. The ES photodynamics is further elucidated by measuring the level anticrossing of the V_{B}^{-} defects under varying external magnetic fields. Our results provide important information for utilizing the spin defects of h-BN in quantum technology.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/163532