Rational Control on Quantum Emitter Formation in Carbon-Doped Monolayer Hexagonal Boron Nitride.

Liu, H; Mendelson, N; Abidi, IH; Li, S; Liu, Z; Cai, Y; Zhang, K; You, J; Tamtaji, M; Wong, H; Ding, Y; Chen, G; Aharonovich, I; Luo, Z

Rational Control on Quantum Emitter Formation in Carbon-Doped Monolayer Hexagonal Boron Nitride.

Liu, H Mendelson, N Abidi, IH Li, S Liu, Z Cai, Y Zhang, K You, J Tamtaji, M Wong, H Ding, Y Chen, G Aharonovich, I

Luo, Z

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Publisher:: American Chemical Society
Publication Type:: Journal Article
Citation:: ACS Applied Materials and Interfaces, 2022, 14, (2), pp. 3189-3198
Issue Date:: 2022-01-19

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Field	Value	Language
dc.contributor.author	Liu, H
dc.contributor.author	Mendelson, N
dc.contributor.author	Abidi, IH
dc.contributor.author	Li, S
dc.contributor.author	Liu, Z
dc.contributor.author	Cai, Y
dc.contributor.author	Zhang, K
dc.contributor.author	You, J
dc.contributor.author	Tamtaji, M
dc.contributor.author	Wong, H
dc.contributor.author	Ding, Y
dc.contributor.author	Chen, G
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.author	Luo, Z
dc.date.accessioned	2022-11-17T02:11:59Z
dc.date.available	2022-11-17T02:11:59Z
dc.date.issued	2022-01-19
dc.identifier.citation	ACS Applied Materials and Interfaces, 2022, 14, (2), pp. 3189-3198
dc.identifier.issn	1944-8244
dc.identifier.issn	1944-8252
dc.identifier.uri	http://hdl.handle.net/10453/163537
dc.description.abstract	Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising candidates for quantum light generation. Despite this, techniques to control the formation of hBN SPEs down to the monolayer limit are yet to be demonstrated. Recent experimental and theoretical investigations have suggested that the visible wavelength single-photon emitters in hBN originate from carbon-related defects. Here, we demonstrate a simple strategy for controlling SPE creation during the chemical vapor deposition growth of monolayer hBN via regulating surface carbon concentration. By increasing the surface carbon concentration during hBN growth, we observe increases in carbon doping levels by 2.4-fold for B-C bonds and 1.6-fold for N-C bonds. For the same samples, we observe an increase in the SPE density from 0.13 to 0.30 emitters/μm2. Our simple method enables the reliable creation of hBN SPEs in monolayer samples for the first time, opening the door to advanced two-dimensional (2D) quantum state engineering.
dc.format	Print-Electronic
dc.language	eng
dc.publisher	American Chemical Society
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation.ispartof	ACS Applied Materials and Interfaces
dc.relation.isbasedon	10.1021/acsami.1c21781
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	03 Chemical Sciences, 09 Engineering
dc.subject.classification	Nanoscience & Nanotechnology
dc.title	Rational Control on Quantum Emitter Formation in Carbon-Doped Monolayer Hexagonal Boron Nitride.
dc.type	Journal Article
utslib.citation.volume	14
utslib.location.activity	United States
utslib.for	03 Chemical Sciences
utslib.for	09 Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2022-11-17T02:11:51Z
pubs.issue	2
pubs.publication-status	Published
pubs.volume	14
utslib.citation.issue	2

Abstract:

Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising candidates for quantum light generation. Despite this, techniques to control the formation of hBN SPEs down to the monolayer limit are yet to be demonstrated. Recent experimental and theoretical investigations have suggested that the visible wavelength single-photon emitters in hBN originate from carbon-related defects. Here, we demonstrate a simple strategy for controlling SPE creation during the chemical vapor deposition growth of monolayer hBN via regulating surface carbon concentration. By increasing the surface carbon concentration during hBN growth, we observe increases in carbon doping levels by 2.4-fold for B-C bonds and 1.6-fold for N-C bonds. For the same samples, we observe an increase in the SPE density from 0.13 to 0.30 emitters/μm2. Our simple method enables the reliable creation of hBN SPEs in monolayer samples for the first time, opening the door to advanced two-dimensional (2D) quantum state engineering.

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http://hdl.handle.net/10453/163537