A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation

Manning, TJ; Hardy, T; Merklein, M; Wintrebert-Fouquet, M; Phillips, MR

A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation

Manning, TJ Hardy, T Merklein, M Wintrebert-Fouquet, M Phillips, MR

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Publication Type:: Conference Proceeding
Citation:: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 2010, pp. 139 - 140
Issue Date:: 2010-12-01

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Field	Value	Language
dc.contributor.author	Manning, TJ	en_US
dc.contributor.author	Hardy, T	en_US
dc.contributor.author	Merklein, M	en_US
dc.contributor.author	Wintrebert-Fouquet, M	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.date.issued	2010-12-01	en_US
dc.identifier.citation	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 2010, pp. 139 - 140	en_US
dc.identifier.isbn	9781424473328	en_US
dc.identifier.uri	http://hdl.handle.net/10453/16412
dc.description.abstract	Low Energy Electron Beam Irradiation (LEEBI) was found to quench the donor-acceptor pair (DAP) attributed to carbon (CN at 3.28 eV at 80 K) and enhances the emission of the 3.27 eV peak, which has been attributed to a free-to-bound (e,Mg0) transition at 300 K. This results in increased cathodoluminescence (CL) emission at room temperature and a decrease in CL emission at liquid nitrogen temperatures (~77 K). © 2010 IEEE.	en_US
dc.relation.ispartof	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD	en_US
dc.relation.isbasedon	10.1109/COMMAD.2010.5699705	en_US
dc.title	A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation	en_US
dc.type	Conference Proceeding
utslib.for	0906 Electrical and Electronic Engineering	en_US
dc.location.activity	Canberra, ACT	en_US
dc.location.activity	ISI:000177626200011
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US

Abstract:

Low Energy Electron Beam Irradiation (LEEBI) was found to quench the donor-acceptor pair (DAP) attributed to carbon (CN at 3.28 eV at 80 K) and enhances the emission of the 3.27 eV peak, which has been attributed to a free-to-bound (e,Mg0) transition at 300 K. This results in increased cathodoluminescence (CL) emission at room temperature and a decrease in CL emission at liquid nitrogen temperatures (~77 K). © 2010 IEEE.

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http://hdl.handle.net/10453/16412