A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation

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Conference Proceeding
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 2010, pp. 139 - 140
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Low Energy Electron Beam Irradiation (LEEBI) was found to quench the donor-acceptor pair (DAP) attributed to carbon (CN at 3.28 eV at 80 K) and enhances the emission of the 3.27 eV peak, which has been attributed to a free-to-bound (e,Mg0) transition at 300 K. This results in increased cathodoluminescence (CL) emission at room temperature and a decrease in CL emission at liquid nitrogen temperatures (~77 K). © 2010 IEEE.
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