A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation

Publisher:
IEEE
Publication Type:
Conference Proceeding
Citation:
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 2010, pp. 139 - 140
Issue Date:
2010-01
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Low Energy Electron Beam Irradiation (LEEBI) was found to quench the donor-acceptor pair (DAP) attributed to carbon (CN at 3.28 eV at 80 K) and enhances the emission of the 3.27 eV peak, which has been attributed to a free-to-bound (e,Mg0) transition at
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