Suppression of Surface Roughening during Ion Bombardment of Semiconductors

Scott, JA; Bishop, J; Toth, M

Suppression of Surface Roughening during Ion Bombardment of Semiconductors

Scott, JA Bishop, J

Toth, M

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Publisher:: AMER CHEMICAL SOC
Publication Type:: Journal Article
Citation:: Chemistry of Materials, 2022, 34, (19), pp. 8968-8974
Issue Date:: 2022-10-11

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Field	Value	Language
dc.contributor.author	Scott, JA
dc.contributor.author	Bishop, J https://orcid.org/0000-0001-6895-7544
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899
dc.date.accessioned	2023-02-08T02:40:01Z
dc.date.available	2023-02-08T02:40:01Z
dc.date.issued	2022-10-11
dc.identifier.citation	Chemistry of Materials, 2022, 34, (19), pp. 8968-8974
dc.identifier.issn	0897-4756
dc.identifier.issn	1520-5002
dc.identifier.uri	http://hdl.handle.net/10453/165994
dc.description.abstract	Ion beams are used routinely for processing of semiconductors, particularly sputtering, ion implantation, and direct-write fabrication of nanostructures. However, the utility of ion beam techniques is limited by crystal damage and surface roughening. Damage can be reduced or eliminated by performing irradiation at elevated temperatures. However, under these conditions, surface roughening is highly problematic due to thermal mobility of adatoms and surface vacancies. Here, we solve this problem using hydrogen gas, which we use to stabilize surface mass flow and suppress roughening during ion bombardment of elemental and compound semiconductors. We achieve smooth surfaces during ion beam processing and show that the method can be enhanced by radicalizing H2gas using a remote plasma source. Our approach is broadly applicable and expands the utility of ion beam techniques for the processing and fabrication of functional materials and nanostructures.
dc.language	English
dc.publisher	AMER CHEMICAL SOC
dc.relation	http://purl.org/au-research/grants/arc/LP170100150
dc.relation	http://purl.org/au-research/grants/arc/DP190101058
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation.ispartof	Chemistry of Materials
dc.relation.isbasedon	10.1021/acs.chemmater.2c02391
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	03 Chemical Sciences, 09 Engineering
dc.subject.classification	Materials
dc.title	Suppression of Surface Roughening during Ion Bombardment of Semiconductors
dc.type	Journal Article
utslib.citation.volume	34
utslib.for	03 Chemical Sciences
utslib.for	09 Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
dc.date.updated	2023-02-08T02:39:59Z
pubs.issue	19
pubs.publication-status	Published
pubs.volume	34
utslib.citation.issue	19

Abstract:

Ion beams are used routinely for processing of semiconductors, particularly sputtering, ion implantation, and direct-write fabrication of nanostructures. However, the utility of ion beam techniques is limited by crystal damage and surface roughening. Damage can be reduced or eliminated by performing irradiation at elevated temperatures. However, under these conditions, surface roughening is highly problematic due to thermal mobility of adatoms and surface vacancies. Here, we solve this problem using hydrogen gas, which we use to stabilize surface mass flow and suppress roughening during ion bombardment of elemental and compound semiconductors. We achieve smooth surfaces during ion beam processing and show that the method can be enhanced by radicalizing H2gas using a remote plasma source. Our approach is broadly applicable and expands the utility of ion beam techniques for the processing and fabrication of functional materials and nanostructures.

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http://hdl.handle.net/10453/165994