Enhancement of excitonic and defect-related luminescence in neutron transmutation doped β-Ga2 O3

Irvine, CP; Stopic, A; Westerhausen, MT; Phillips, MR; Ton-That, C

Enhancement of excitonic and defect-related luminescence in neutron transmutation doped β-Ga2 O3

Irvine, CP Stopic, A Westerhausen, MT Phillips, MR Ton-That, C

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Publisher:: American Physical Society (APS)
Publication Type:: Journal Article
Citation:: Physical Review Materials, 2022, 6, (11), pp. 114603
Issue Date:: 2022-11-01

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Field	Value	Language
dc.contributor.author	Irvine, CP
dc.contributor.author	Stopic, A
dc.contributor.author	Westerhausen, MT
dc.contributor.author	Phillips, MR
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739
dc.date.accessioned	2023-02-17T02:47:13Z
dc.date.available	2023-02-17T02:47:13Z
dc.date.issued	2022-11-01
dc.identifier.citation	Physical Review Materials, 2022, 6, (11), pp. 114603
dc.identifier.issn	2476-0455
dc.identifier.issn	2475-9953
dc.identifier.uri	http://hdl.handle.net/10453/166225
dc.description.abstract	Neutron irradiation analysis, inductively coupled plasma mass spectrometry (ICPMS), and cathodoluminescence (CL) spectroscopy are used to investigate the influence of transmuted Ge incorporation on the luminescence properties of β-Ga2O3 single crystals. Calculations based on Ga2O3-neutron interaction reveal temporal variations of both Ge and Zn concentrations as a function of time during and after neutron irradiation. To produce a concentration of 5×1018Gedonors/cm3 from the neutron transmutation of Ga, the β-Ga2O3 crystal was irradiated for 27 h, which was accompanied by the incorporation of 1016Znacceptors/cm3. These calculated dopant concentrations are confirmed by ICPMS. The β-Ga2O3 crystals exhibit a UV band at 3.40 eV due to self-trapped holes (STHs) and two blue donor-acceptor pair (DAP) peaks at 3.14 eV (BL1) and 2.92 eV (BL2). In addition to the neutron-induced incorporation of substitutional Ge donors and Zn acceptors on Ga sites, Ga vacancies (VGa) were created by high-energy neutrons in the flux, which strongly enhanced the BL1 peak. The VGa acceptors compensate the neutron-induced Ge donors, making the Ga2O3 crystal highly resistive. Concurrent temperature-resolved CL measurements of the β-Ga2O3 before and after neutron irradiation reveal a twofold increase in both the STH and BL1 peaks. This result suggests that STHs are preferentially localized at an O site adjacent to VGa, as theoretically predicted by Kananen et al. [Appl. Phys. Lett. 110, 202104 (2017)10.1063/1.4983814.]. Analysis of the Ga2O3 CL temperature dependence reveals that the UV and BL1 bands after the neutron irradiation exhibit an equivalent activation energy of 100±10meV due to the presence of a neutron-induced defect that acts as an efficient competitive nonradiative recombination channel. The results also provide evidence that the BL1 and BL2 bands arise from different DAP pairs.
dc.language	en
dc.publisher	American Physical Society (APS)
dc.relation	http://purl.org/au-research/grants/arc/DP210101146
dc.relation.ispartof	Physical Review Materials
dc.relation.isbasedon	10.1103/PhysRevMaterials.6.114603
dc.rights	info:eu-repo/semantics/openAccess
dc.rights	© American Physical Society (APS) [Enhancement of excitonic and defect-related luminescence in neutron transmutation doped https://doi.org/10.1103/PhysRevMaterials.6.11460
dc.title	Enhancement of excitonic and defect-related luminescence in neutron transmutation doped β-Ga2 O3
dc.type	Journal Article
utslib.citation.volume	6
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access	*
dc.date.updated	2023-02-17T02:47:11Z
pubs.issue	11
pubs.publication-status	Published
pubs.volume	6
utslib.citation.issue	11

Abstract:

Neutron irradiation analysis, inductively coupled plasma mass spectrometry (ICPMS), and cathodoluminescence (CL) spectroscopy are used to investigate the influence of transmuted Ge incorporation on the luminescence properties of β-Ga2O3 single crystals. Calculations based on Ga2O3-neutron interaction reveal temporal variations of both Ge and Zn concentrations as a function of time during and after neutron irradiation. To produce a concentration of 5×1018Gedonors/cm3 from the neutron transmutation of Ga, the β-Ga2O3 crystal was irradiated for 27 h, which was accompanied by the incorporation of 1016Znacceptors/cm3. These calculated dopant concentrations are confirmed by ICPMS. The β-Ga2O3 crystals exhibit a UV band at 3.40 eV due to self-trapped holes (STHs) and two blue donor-acceptor pair (DAP) peaks at 3.14 eV (BL1) and 2.92 eV (BL2). In addition to the neutron-induced incorporation of substitutional Ge donors and Zn acceptors on Ga sites, Ga vacancies (VGa) were created by high-energy neutrons in the flux, which strongly enhanced the BL1 peak. The VGa acceptors compensate the neutron-induced Ge donors, making the Ga2O3 crystal highly resistive. Concurrent temperature-resolved CL measurements of the β-Ga2O3 before and after neutron irradiation reveal a twofold increase in both the STH and BL1 peaks. This result suggests that STHs are preferentially localized at an O site adjacent to VGa, as theoretically predicted by Kananen et al. [Appl. Phys. Lett. 110, 202104 (2017)10.1063/1.4983814.]. Analysis of the Ga2O3 CL temperature dependence reveals that the UV and BL1 bands after the neutron irradiation exhibit an equivalent activation energy of 100±10meV due to the presence of a neutron-induced defect that acts as an efficient competitive nonradiative recombination channel. The results also provide evidence that the BL1 and BL2 bands arise from different DAP pairs.

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http://hdl.handle.net/10453/166225