Photophysics of blue quantum emitters in hexagonal Boron Nitride

Zhigulin, I; Yamamura, K; Ivady, V; Gale, A; Horder, J; Lobo, CJ; Kianinia, M; Toth, M; Aharonovich, I

Photophysics of blue quantum emitters in hexagonal Boron Nitride

Zhigulin, I Yamamura, K Ivady, V Gale, A Horder, J Lobo, CJ Kianinia, M

Toth, M Aharonovich, I

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Publisher:: IOP Publishing
Publication Type:: Journal Article
Citation:: Materials for Quantum Technology

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Field	Value	Language
dc.contributor.author	Zhigulin, I
dc.contributor.author	Yamamura, K
dc.contributor.author	Ivady, V
dc.contributor.author	Gale, A
dc.contributor.author	Horder, J
dc.contributor.author	Lobo, CJ
dc.contributor.author	Kianinia, M https://orcid.org/0000-0003-4073-1492
dc.contributor.author	Toth, M
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.date.accessioned	2023-02-22T05:27:25Z
dc.date.available	2023-02-22T05:27:25Z
dc.identifier.citation	Materials for Quantum Technology
dc.identifier.issn	2633-4356
dc.identifier.issn	2633-4356
dc.identifier.uri	http://hdl.handle.net/10453/166324
dc.description.abstract	<jats:title>Abstract</jats:title> <jats:p>Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The emitters are fabricated by different electron beam irradiation and annealing conditions and exhibit narrow-band luminescence centred at 436 nm. Photon statistics as well as rigorous photodynamics analysis unveils potential level structure of the emitters, which suggests lack of a metastable state, supported by a theoretical analysis. The potential defect can have an electronic structure with fully occupied defect state in the lower half of the hBN band gap and empty defect state in the upper half of the band gap. Overall, our results are important to understand the photophysical properties of the emerging family of blue quantum emitters in hBN as potential sources for scalable quantum photonic applications. </jats:p>
dc.language	en
dc.publisher	IOP Publishing
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation	United States Department of the NavyN629092212028
dc.relation.ispartof	Materials for Quantum Technology
dc.relation.isbasedon	10.1088/2633-4356/acb87f
dc.rights	info:eu-repo/semantics/openAccess
dc.title	Photophysics of blue quantum emitters in hexagonal Boron Nitride
dc.type	Journal Article
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access	*
dc.date.updated	2023-02-22T05:27:24Z
pubs.publication-status	Published online

Abstract:

Abstract Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The emitters are fabricated by different electron beam irradiation and annealing conditions and exhibit narrow-band luminescence centred at 436 nm. Photon statistics as well as rigorous photodynamics analysis unveils potential level structure of the emitters, which suggests lack of a metastable state, supported by a theoretical analysis. The potential defect can have an electronic structure with fully occupied defect state in the lower half of the hBN band gap and empty defect state in the upper half of the band gap. Overall, our results are important to understand the photophysical properties of the emerging family of blue quantum emitters in hBN as potential sources for scalable quantum photonic applications.

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http://hdl.handle.net/10453/166324