Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics

Azimi, Z; Gopakumar, A; Li, L; Kremer, F; Lockrey, M; Wibowo, AA; Nguyen, HT; Tan, HH; Jagadish, C; Wong-Leung, J

Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics

Azimi, Z Gopakumar, A Li, L Kremer, F Lockrey, M

Wibowo, AA Nguyen, HT Tan, HH Jagadish, C Wong-Leung, J

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Publisher:: Wiley
Publication Type:: Journal Article
Citation:: Advanced Optical Materials, 2022, 10, (18), pp. 2200739
Issue Date:: 2022-09-01

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Field	Value	Language
dc.contributor.author	Azimi, Z
dc.contributor.author	Gopakumar, A
dc.contributor.author	Li, L
dc.contributor.author	Kremer, F
dc.contributor.author	Lockrey, M https://orcid.org/0000-0002-0050-2858
dc.contributor.author	Wibowo, AA
dc.contributor.author	Nguyen, HT
dc.contributor.author	Tan, HH
dc.contributor.author	Jagadish, C
dc.contributor.author	Wong-Leung, J
dc.date.accessioned	2023-06-05T03:32:14Z
dc.date.available	2023-06-05T03:32:14Z
dc.date.issued	2022-09-01
dc.identifier.citation	Advanced Optical Materials, 2022, 10, (18), pp. 2200739
dc.identifier.issn	2195-1071
dc.identifier.issn	2195-1071
dc.identifier.uri	http://hdl.handle.net/10453/170626
dc.description.abstract	Catalyst-free InGaAs nanowires are promising building blocks for optoelectronic devices operating at telecommunication wavelengths. Despite progress, the applications of InGaAs nanowires remain limited due to their high density of surface states that degrade their optical properties. Here, InGaAs nanowires with superior optical properties are achieved by effectively suppressing their surface states with an InP passivation shell. Optimal InP shell growth conditions and thickness to maximize the minority carrier lifetime are identified. The photoluminescence intensity of these passivated InGaAs nanowires is up to three orders of magnitude higher than that of their bare counterparts. Moreover, a long minority carrier lifetime of up to ≈13 ns is measured with these passivated nanowires at room temperature. Optimal passivation of InGaAs nanowires with an emission wavelength of 1530 nm results in an ultra-low surface recombination velocity of ≈280 cm s−1. In addition to the shell, the crystal structure of these nanowires plays an important role in the luminescence intensity. Combined cathodoluminescence mapping and high-resolution transmission electron microscopy along the nanowires reveal significantly lower emission intensities in wurtzite predominant sections of the nanowires than zinc blende predominant ones.These insights on the optimal passivation of InGaAs provide directions for engineering high-performance nanoscale-devices in the telecommunication wavelength.
dc.language	en
dc.publisher	Wiley
dc.relation.ispartof	Advanced Optical Materials
dc.relation.isbasedon	10.1002/adom.202200739
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	0205 Optical Physics, 0906 Electrical and Electronic Engineering, 0912 Materials Engineering
dc.title	Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics
dc.type	Journal Article
utslib.citation.volume	10
utslib.for	0205 Optical Physics
utslib.for	0906 Electrical and Electronic Engineering
utslib.for	0912 Materials Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
utslib.copyright.status	open_access	*
dc.date.updated	2023-06-05T03:32:12Z
pubs.issue	18
pubs.publication-status	Published
pubs.volume	10
utslib.citation.issue	18

Abstract:

Catalyst-free InGaAs nanowires are promising building blocks for optoelectronic devices operating at telecommunication wavelengths. Despite progress, the applications of InGaAs nanowires remain limited due to their high density of surface states that degrade their optical properties. Here, InGaAs nanowires with superior optical properties are achieved by effectively suppressing their surface states with an InP passivation shell. Optimal InP shell growth conditions and thickness to maximize the minority carrier lifetime are identified. The photoluminescence intensity of these passivated InGaAs nanowires is up to three orders of magnitude higher than that of their bare counterparts. Moreover, a long minority carrier lifetime of up to ≈13 ns is measured with these passivated nanowires at room temperature. Optimal passivation of InGaAs nanowires with an emission wavelength of 1530 nm results in an ultra-low surface recombination velocity of ≈280 cm s−1. In addition to the shell, the crystal structure of these nanowires plays an important role in the luminescence intensity. Combined cathodoluminescence mapping and high-resolution transmission electron microscopy along the nanowires reveal significantly lower emission intensities in wurtzite predominant sections of the nanowires than zinc blende predominant ones.These insights on the optimal passivation of InGaAs provide directions for engineering high-performance nanoscale-devices in the telecommunication wavelength.

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http://hdl.handle.net/10453/170626