Defect Compensation in Nitrogen-Doped β-Ga<inf>2</inf>O<inf>3</inf>Nanowires: Implications for Bipolar Nanoscale Devices

Yamamura, K; Zhu, L; Irvine, CP; Scott, JA; Singh, M; Jallandhra, A; Bansal, V; Phillips, MR; Ton-That, C

Defect Compensation in Nitrogen-Doped β-Ga<inf>2</inf>O<inf>3</inf>Nanowires: Implications for Bipolar Nanoscale Devices

Yamamura, K Zhu, L Irvine, CP Scott, JA Singh, M Jallandhra, A Bansal, V Phillips, MR Ton-That, C

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Publisher:: AMER CHEMICAL SOC
Publication Type:: Journal Article
Citation:: ACS Applied Nano Materials, 2022, 5, (9), pp. 12087-12094
Issue Date:: 2022-09-23

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Field	Value	Language
dc.contributor.author	Yamamura, K
dc.contributor.author	Zhu, L
dc.contributor.author	Irvine, CP
dc.contributor.author	Scott, JA
dc.contributor.author	Singh, M
dc.contributor.author	Jallandhra, A
dc.contributor.author	Bansal, V
dc.contributor.author	Phillips, MR
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739
dc.date.accessioned	2023-06-05T03:42:10Z
dc.date.available	2023-06-05T03:42:10Z
dc.date.issued	2022-09-23
dc.identifier.citation	ACS Applied Nano Materials, 2022, 5, (9), pp. 12087-12094
dc.identifier.issn	2574-0970
dc.identifier.issn	2574-0970
dc.identifier.uri	http://hdl.handle.net/10453/170628
dc.description.abstract	Nitrogen (N) is a promising candidate currently being pursued for p-type doping in Ga2O3. In this work, the results of detailed investigations into N-doped β-Ga2O3nanowires using microstructural, chemical, and optical analyses are described. Monoclinic β-Ga2O3nanowires are grown by chemical vapor deposition using a metallic gallium (Ga) precursor and subsequently doped with N by remote plasma by exploiting their nanoscale cross sections and large surface-to-volume ratios. The N incorporation into β-Ga2O3is confirmed by X-ray absorption near-edge and Raman spectroscopies without changes in the nanowire morphology. N is found to exist mainly as molecular N2and N-O chemical states, but a significant portion of N substitutes on oxygen (O) sites. Concurrent temperature-resolved cathodoluminescence measurements of the undoped and N-doped β-Ga2O3are used to track the temperature dependences of their intrinsic ultraviolet (UV) luminescence and defect-related visible bands from 80 to 480 K. The blue and green bands increase in intensity relative to the UV after N doping; however, their intensity variations with temperature are found to be identical for the undoped and N-doped β-Ga2O3, indicating that these bands originate from existing recombination pathways in Ga2O3rather than from radiative N-related centers. The enhancement in defect-related luminescence in N-doped β-Ga2O3is explained by an increase in the concentration of O vacancies as a result of the compensation of NOacceptors.
dc.language	English
dc.publisher	AMER CHEMICAL SOC
dc.relation	http://purl.org/au-research/grants/arc/DP210101146
dc.relation.ispartof	ACS Applied Nano Materials
dc.relation.isbasedon	10.1021/acsanm.2c00599
dc.rights	info:eu-repo/semantics/closedAccess
dc.title	Defect Compensation in Nitrogen-Doped β-Ga<inf>2</inf>O<inf>3</inf>Nanowires: Implications for Bipolar Nanoscale Devices
dc.type	Journal Article
utslib.citation.volume	5
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
dc.date.updated	2023-06-05T03:42:07Z
pubs.issue	9
pubs.publication-status	Published
pubs.volume	5
utslib.citation.issue	9

Abstract:

Nitrogen (N) is a promising candidate currently being pursued for p-type doping in Ga2O3. In this work, the results of detailed investigations into N-doped β-Ga2O3nanowires using microstructural, chemical, and optical analyses are described. Monoclinic β-Ga2O3nanowires are grown by chemical vapor deposition using a metallic gallium (Ga) precursor and subsequently doped with N by remote plasma by exploiting their nanoscale cross sections and large surface-to-volume ratios. The N incorporation into β-Ga2O3is confirmed by X-ray absorption near-edge and Raman spectroscopies without changes in the nanowire morphology. N is found to exist mainly as molecular N2and N-O chemical states, but a significant portion of N substitutes on oxygen (O) sites. Concurrent temperature-resolved cathodoluminescence measurements of the undoped and N-doped β-Ga2O3are used to track the temperature dependences of their intrinsic ultraviolet (UV) luminescence and defect-related visible bands from 80 to 480 K. The blue and green bands increase in intensity relative to the UV after N doping; however, their intensity variations with temperature are found to be identical for the undoped and N-doped β-Ga2O3, indicating that these bands originate from existing recombination pathways in Ga2O3rather than from radiative N-related centers. The enhancement in defect-related luminescence in N-doped β-Ga2O3is explained by an increase in the concentration of O vacancies as a result of the compensation of NOacceptors.

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http://hdl.handle.net/10453/170628