Quantum Emitters in Hexagonal Boron Nitride.

Aharonovich, I; Tetienne, J-P; Toth, M

Quantum Emitters in Hexagonal Boron Nitride.

Aharonovich, I

Tetienne, J-P Toth, M

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Publisher:: AMER CHEMICAL SOC
Publication Type:: Journal Article
Citation:: Nano Lett, 2022, 22, (23), pp. 9227-9235
Issue Date:: 2022-12-14

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Field	Value	Language
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.author	Tetienne, J-P
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899
dc.date.accessioned	2023-06-05T04:06:51Z
dc.date.available	2023-06-05T04:06:51Z
dc.date.issued	2022-12-14
dc.identifier.citation	Nano Lett, 2022, 22, (23), pp. 9227-9235
dc.identifier.issn	1530-6984
dc.identifier.issn	1530-6992
dc.identifier.uri	http://hdl.handle.net/10453/170632
dc.description.abstract	Hexagonal boron nitride (hBN) has emerged as a fascinating platform to explore quantum emitters and their applications. Beyond being a wide-bandgap material, it is also a van der Waals crystal, enabling direct exfoliation of atomically thin layers─a combination which offers unique advantages over bulk, 3D crystals. In this Mini Review we discuss the unique properties of hBN quantum emitters and highlight progress toward their future implementation in practical devices. We focus on engineering and integration of the emitters with scalable photonic resonators. We also highlight recently discovered spin defects in hBN and discuss their potential utility for quantum sensing. All in all, hBN has become a front runner in explorations of solid-state quantum science with promising future prospects.
dc.format	Print-Electronic
dc.language	eng
dc.publisher	AMER CHEMICAL SOC
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation	United States Department of the NavyN629092212028
dc.relation.ispartof	Nano Lett
dc.relation.isbasedon	10.1021/acs.nanolett.2c03743
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Nanoscience & Nanotechnology
dc.title	Quantum Emitters in Hexagonal Boron Nitride.
dc.type	Journal Article
utslib.citation.volume	22
utslib.location.activity	United States
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
dc.date.updated	2023-06-05T04:06:47Z
pubs.issue	23
pubs.publication-status	Published
pubs.volume	22
utslib.citation.issue	23

Abstract:

Hexagonal boron nitride (hBN) has emerged as a fascinating platform to explore quantum emitters and their applications. Beyond being a wide-bandgap material, it is also a van der Waals crystal, enabling direct exfoliation of atomically thin layers─a combination which offers unique advantages over bulk, 3D crystals. In this Mini Review we discuss the unique properties of hBN quantum emitters and highlight progress toward their future implementation in practical devices. We focus on engineering and integration of the emitters with scalable photonic resonators. We also highlight recently discovered spin defects in hBN and discuss their potential utility for quantum sensing. All in all, hBN has become a front runner in explorations of solid-state quantum science with promising future prospects.

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http://hdl.handle.net/10453/170632