Atomically Thin Gallium Nitride for High-Performance Photodetection

Jain, SK; Syed, N; Balendhran, S; Abbas, SAT; Ako, RT; Low, MX; Lobo, C; Zavabeti, A; Murdoch, BJ; Gupta, G; Bhaskaran, M; Crozier, KB; Russo, SP; Daeneke, T; Walia, S

Atomically Thin Gallium Nitride for High-Performance Photodetection

Jain, SK Syed, N Balendhran, S Abbas, SAT Ako, RT Low, MX Lobo, C

Zavabeti, A Murdoch, BJ Gupta, G Bhaskaran, M Crozier, KB Russo, SP Daeneke, T Walia, S

Permalink

Publisher:: Wiley
Publication Type:: Journal Article
Citation:: Advanced Optical Materials, 2023
Issue Date:: 2023-01-01

Closed Access

	Filename	Description	Size
	Jain-2023-Atomically-thin-gallium-nitride-for.pdf		2.97 MB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Jain, SK
dc.contributor.author	Syed, N
dc.contributor.author	Balendhran, S
dc.contributor.author	Abbas, SAT
dc.contributor.author	Ako, RT
dc.contributor.author	Low, MX
dc.contributor.author	Lobo, C https://orcid.org/0000-0002-2746-1363
dc.contributor.author	Zavabeti, A
dc.contributor.author	Murdoch, BJ
dc.contributor.author	Gupta, G
dc.contributor.author	Bhaskaran, M
dc.contributor.author	Crozier, KB
dc.contributor.author	Russo, SP
dc.contributor.author	Daeneke, T
dc.contributor.author	Walia, S
dc.date.accessioned	2023-06-21T02:26:07Z
dc.date.available	2023-06-21T02:26:07Z
dc.date.issued	2023-01-01
dc.identifier.citation	Advanced Optical Materials, 2023
dc.identifier.issn	2195-1071
dc.identifier.issn	2195-1071
dc.identifier.uri	http://hdl.handle.net/10453/170808
dc.description.abstract	Gallium nitride (GaN) technology has matured and commercialised for optoelectronic devices in the ultraviolet (UV) spectrum over the last few decades. Simultaneously, atomically thin materials with unique features have emerged as contenders for device miniaturization. However, the lack of successful techniques to produce ultra-thin GaN prevents access to these new predicted properties. Here, this important gap is addressed by printing millimeter-large ultra-thin GaN nanosheets (NS) (≈1.4 nm) using a simple two-step process that simultaneously introduces nitrogen point defects. This extends the photoelectrical spectral response from UV (280 nm) to near infrared (NIR) (1080 nm). The GaN-based photodetectors display excellent figures of merit, having a responsivity (2.72 × 104 A W−1) up to four orders of magnitude higher than the commercial photodetectors at room temperature, despite being 102–103 times thinner. The photodetectors exhibit fast switching, with rise and decay time in the range of microseconds. The state-of-the-art device performance originates from the ultra-thin nature of GaN NS coupled with nitrogen point vacancies in the synthesis process. This work presents the opportunity to significantly expand the reach of GaN semiconductor technology and may lead to applications in high-performance miniaturized imaging systems, spectroscopy, communication, and integrated optoelectronic circuits.
dc.language	en
dc.publisher	Wiley
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation.ispartof	Advanced Optical Materials
dc.relation.isbasedon	10.1002/adom.202300438
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0205 Optical Physics, 0906 Electrical and Electronic Engineering, 0912 Materials Engineering
dc.title	Atomically Thin Gallium Nitride for High-Performance Photodetection
dc.type	Journal Article
utslib.for	0205 Optical Physics
utslib.for	0906 Electrical and Electronic Engineering
utslib.for	0912 Materials Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
dc.date.updated	2023-06-21T02:26:04Z
pubs.publication-status	Published

Abstract:

Gallium nitride (GaN) technology has matured and commercialised for optoelectronic devices in the ultraviolet (UV) spectrum over the last few decades. Simultaneously, atomically thin materials with unique features have emerged as contenders for device miniaturization. However, the lack of successful techniques to produce ultra-thin GaN prevents access to these new predicted properties. Here, this important gap is addressed by printing millimeter-large ultra-thin GaN nanosheets (NS) (≈1.4 nm) using a simple two-step process that simultaneously introduces nitrogen point defects. This extends the photoelectrical spectral response from UV (280 nm) to near infrared (NIR) (1080 nm). The GaN-based photodetectors display excellent figures of merit, having a responsivity (2.72 × 104 A W−1) up to four orders of magnitude higher than the commercial photodetectors at room temperature, despite being 102–103 times thinner. The photodetectors exhibit fast switching, with rise and decay time in the range of microseconds. The state-of-the-art device performance originates from the ultra-thin nature of GaN NS coupled with nitrogen point vacancies in the synthesis process. This work presents the opportunity to significantly expand the reach of GaN semiconductor technology and may lead to applications in high-performance miniaturized imaging systems, spectroscopy, communication, and integrated optoelectronic circuits.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/170808