Manipulating the Charge State of Spin Defects in Hexagonal Boron Nitride.

Gale, A; Scognamiglio, D; Zhigulin, I; Whitefield, B; Kianinia, M; Aharonovich, I; Toth, M

Manipulating the Charge State of Spin Defects in Hexagonal Boron Nitride.

Gale, A Scognamiglio, D Zhigulin, I Whitefield, B Kianinia, M

Aharonovich, I

Toth, M

Permalink

Publisher:: AMER CHEMICAL SOC
Publication Type:: Journal Article
Citation:: Nano Lett, 2023, 23, (13), pp. 6141-6147
Issue Date:: 2023-07-12

Closed Access

	Filename	Description	Size
	gale-et-al-2023-manipulating-the-charge-state-of-spin-defects-in-hexagonal-boron-nitride.pdf	Published version	2.09 MB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Gale, A
dc.contributor.author	Scognamiglio, D
dc.contributor.author	Zhigulin, I
dc.contributor.author	Whitefield, B
dc.contributor.author	Kianinia, M https://orcid.org/0000-0003-4073-1492
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899
dc.date.accessioned	2024-02-07T04:29:42Z
dc.date.available	2024-02-07T04:29:42Z
dc.date.issued	2023-07-12
dc.identifier.citation	Nano Lett, 2023, 23, (13), pp. 6141-6147
dc.identifier.issn	1530-6984
dc.identifier.issn	1530-6992
dc.identifier.uri	http://hdl.handle.net/10453/175421
dc.description.abstract	Negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) have recently gained interest as spin defects for quantum information processing and quantum sensing by a layered material. However, the boron vacancy can exist in a number of charge states in the hBN lattice, but only the -1 state has spin-dependent photoluminescence and acts as a spin-photon interface. Here, we investigate the charge state switching of VB defects under laser and electron beam excitation. We demonstrate deterministic, reversible switching between the -1 and 0 states (VB- ⇌ VB0 + e-), occurring at rates controlled by excess electrons or holes injected into hBN by a layered heterostructure device. Our work provides a means to monitor and manipulate the VB charge state, and to stabilize the -1 state which is a prerequisite for spin manipulation and optical readout of the defect.
dc.format	Print-Electronic
dc.language	eng
dc.publisher	AMER CHEMICAL SOC
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation	United States Department of the NavyN629092212028
dc.relation	http://purl.org/au-research/grants/arc/FT220100053
dc.relation.ispartof	Nano Lett
dc.relation.isbasedon	10.1021/acs.nanolett.3c01678
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Nanoscience & Nanotechnology
dc.title	Manipulating the Charge State of Spin Defects in Hexagonal Boron Nitride.
dc.type	Journal Article
utslib.citation.volume	23
utslib.location.activity	United States
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Science
pubs.organisational-group	University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
pubs.organisational-group	University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
dc.date.updated	2024-02-07T04:29:41Z
pubs.issue	13
pubs.publication-status	Published
pubs.volume	23
utslib.citation.issue	13

Abstract:

Negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) have recently gained interest as spin defects for quantum information processing and quantum sensing by a layered material. However, the boron vacancy can exist in a number of charge states in the hBN lattice, but only the -1 state has spin-dependent photoluminescence and acts as a spin-photon interface. Here, we investigate the charge state switching of VB defects under laser and electron beam excitation. We demonstrate deterministic, reversible switching between the -1 and 0 states (VB- ⇌ VB0 + e-), occurring at rates controlled by excess electrons or holes injected into hBN by a layered heterostructure device. Our work provides a means to monitor and manipulate the VB charge state, and to stabilize the -1 state which is a prerequisite for spin manipulation and optical readout of the defect.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/175421