Annealing of blue quantum emitters in carbon-doped hexagonal boron nitride

Chen, Y; Gale, A; Yamamura, K; Horder, J; Condos, A; Watanabe, K; Taniguchi, T; Toth, M; Aharonovich, I

Annealing of blue quantum emitters in carbon-doped hexagonal boron nitride

Chen, Y

Gale, A Yamamura, K Horder, J

Condos, A Watanabe, K Taniguchi, T Toth, M

Aharonovich, I

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Publisher:: AIP Publishing
Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2023, 123, (4)
Issue Date:: 2023-07-24

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Field	Value	Language
dc.contributor.author	Chen, Y https://orcid.org/0000-0002-2367-8522
dc.contributor.author	Gale, A
dc.contributor.author	Yamamura, K
dc.contributor.author	Horder, J https://orcid.org/0000-0002-1664-1879
dc.contributor.author	Condos, A
dc.contributor.author	Watanabe, K
dc.contributor.author	Taniguchi, T
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.date.accessioned	2024-02-08T04:46:53Z
dc.date.available	2024-02-08T04:46:53Z
dc.date.issued	2023-07-24
dc.identifier.citation	Applied Physics Letters, 2023, 123, (4)
dc.identifier.issn	0003-6951
dc.identifier.issn	1077-3118
dc.identifier.uri	http://hdl.handle.net/10453/175486
dc.description.abstract	Reliable methods to create quantum emitters in hexagonal boron nitride (hBN) are highly sought after for scalable applications in quantum photonic devices. Specifically, recent efforts have focused on defects in hBN with a zero phonon line at 2.8 eV (436 nm). Here, we employ carbon-doped hBN crystals that were irradiated by an electron beam to generate these emitters and perform annealing treatments to investigate the stability of the emitters. We find that the blue emitters are stable up to ∼800 °C. However, upon annealing to 1000 °C, the emitters disappear, and a family of other emitters appears in the region of hBN that had been irradiated by an electron beam. Our findings contribute to the understanding of emitter species and emitter formation in hBN.
dc.language	English
dc.publisher	AIP Publishing
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation	United States Department of the NavyN629092212028
dc.relation	http://purl.org/au-research/grants/arc/FT220100053
dc.relation.ispartof	Applied Physics Letters
dc.relation.isbasedon	10.1063/5.0155311
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	02 Physical Sciences, 09 Engineering, 10 Technology
dc.subject.classification	Applied Physics
dc.subject.classification	40 Engineering
dc.subject.classification	51 Physical sciences
dc.title	Annealing of blue quantum emitters in carbon-doped hexagonal boron nitride
dc.type	Journal Article
utslib.citation.volume	123
utslib.for	02 Physical Sciences
utslib.for	09 Engineering
utslib.for	10 Technology
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Science
pubs.organisational-group	University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
pubs.organisational-group	University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access	*
dc.date.updated	2024-02-08T04:46:51Z
pubs.issue	4
pubs.publication-status	Published
pubs.volume	123
utslib.citation.issue	4

Abstract:

Reliable methods to create quantum emitters in hexagonal boron nitride (hBN) are highly sought after for scalable applications in quantum photonic devices. Specifically, recent efforts have focused on defects in hBN with a zero phonon line at 2.8 eV (436 nm). Here, we employ carbon-doped hBN crystals that were irradiated by an electron beam to generate these emitters and perform annealing treatments to investigate the stability of the emitters. We find that the blue emitters are stable up to ∼800 °C. However, upon annealing to 1000 °C, the emitters disappear, and a family of other emitters appears in the region of hBN that had been irradiated by an electron beam. Our findings contribute to the understanding of emitter species and emitter formation in hBN.

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http://hdl.handle.net/10453/175486