Bottom-up, Chip-Scale Engineering of Low Threshold, Multi-Quantum-Well Microring Lasers.

Wong, WW; Wang, N; Esser, BD; Church, SA; Li, L; Lockrey, M; Aharonovich, I; Parkinson, P; Etheridge, J; Jagadish, C; Tan, HH

Bottom-up, Chip-Scale Engineering of Low Threshold, Multi-Quantum-Well Microring Lasers.

Wong, WW Wang, N Esser, BD Church, SA Li, L Lockrey, M Aharonovich, I

Parkinson, P Etheridge, J Jagadish, C Tan, HH

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Publisher:: AMER CHEMICAL SOC
Publication Type:: Journal Article
Citation:: ACS Nano, 2023, 17, (15), pp. 15065-15076
Issue Date:: 2023-08-08

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Field	Value	Language
dc.contributor.author	Wong, WW
dc.contributor.author	Wang, N
dc.contributor.author	Esser, BD
dc.contributor.author	Church, SA
dc.contributor.author	Li, L
dc.contributor.author	Lockrey, M
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.author	Parkinson, P
dc.contributor.author	Etheridge, J
dc.contributor.author	Jagadish, C
dc.contributor.author	Tan, HH
dc.date.accessioned	2024-02-08T04:59:40Z
dc.date.available	2024-02-08T04:59:40Z
dc.date.issued	2023-08-08
dc.identifier.citation	ACS Nano, 2023, 17, (15), pp. 15065-15076
dc.identifier.issn	1936-0851
dc.identifier.issn	1936-086X
dc.identifier.uri	http://hdl.handle.net/10453/175488
dc.description.abstract	Integrated, on-chip lasers are vital building blocks in future optoelectronic and nanophotonic circuitry. Specifically, III-V materials that are of technological relevance have attracted considerable attention. However, traditional microcavity laser fabrication techniques, including top-down etching and bottom-up catalytic growth, often result in undesirable cavity geometries with poor scalability and reproducibility. Here, we utilize the selective area epitaxy method to deterministically engineer thousands of microring lasers on a single chip. Specifically, we realize a catalyst-free, epitaxial growth of a technologically critical material, InAsP/InP, in a ring-like cavity with embedded multi-quantum-well heterostructures. We elucidate a detailed growth mechanism and leverage the capability to deterministically control the adatom diffusion lengths on selected crystal facets to reproducibly achieve ultrasmooth cavity sidewalls. The engineered devices exhibit a tunable emission wavelength in the telecommunication O-band and show low-threshold lasing with over 80% device efficacy across the chip. Our work marks a significant milestone toward the implementation of a fully integrated III-V materials platform for next-generation high-density integrated photonic and optoelectronic circuits.
dc.format	Print-Electronic
dc.language	eng
dc.publisher	AMER CHEMICAL SOC
dc.relation	http://purl.org/au-research/grants/arc/LE170100118
dc.relation.ispartof	ACS Nano
dc.relation.isbasedon	10.1021/acsnano.3c04234
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Nanoscience & Nanotechnology
dc.title	Bottom-up, Chip-Scale Engineering of Low Threshold, Multi-Quantum-Well Microring Lasers.
dc.type	Journal Article
utslib.citation.volume	17
utslib.location.activity	United States
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Science
pubs.organisational-group	University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
dc.date.updated	2024-02-08T04:59:37Z
pubs.issue	15
pubs.publication-status	Published
pubs.volume	17
utslib.citation.issue	15

Abstract:

Integrated, on-chip lasers are vital building blocks in future optoelectronic and nanophotonic circuitry. Specifically, III-V materials that are of technological relevance have attracted considerable attention. However, traditional microcavity laser fabrication techniques, including top-down etching and bottom-up catalytic growth, often result in undesirable cavity geometries with poor scalability and reproducibility. Here, we utilize the selective area epitaxy method to deterministically engineer thousands of microring lasers on a single chip. Specifically, we realize a catalyst-free, epitaxial growth of a technologically critical material, InAsP/InP, in a ring-like cavity with embedded multi-quantum-well heterostructures. We elucidate a detailed growth mechanism and leverage the capability to deterministically control the adatom diffusion lengths on selected crystal facets to reproducibly achieve ultrasmooth cavity sidewalls. The engineered devices exhibit a tunable emission wavelength in the telecommunication O-band and show low-threshold lasing with over 80% device efficacy across the chip. Our work marks a significant milestone toward the implementation of a fully integrated III-V materials platform for next-generation high-density integrated photonic and optoelectronic circuits.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/175488