Creation of Boron Vacancies in Hexagonal Boron Nitride Exfoliated from Bulk Crystals for Quantum Sensing

Zabelotsky, T; Singh, S; Haim, G; Malkinson, R; Kadkhodazadeh, S; Radko, IP; Aharonovich, I; Steinberg, H; Berg-Sørensen, K; Huck, A; Taniguchi, T; Watanabe, K; Bar-Gill, N

Creation of Boron Vacancies in Hexagonal Boron Nitride Exfoliated from Bulk Crystals for Quantum Sensing

Zabelotsky, T Singh, S Haim, G Malkinson, R Kadkhodazadeh, S Radko, IP Aharonovich, I

Steinberg, H Berg-Sørensen, K Huck, A Taniguchi, T Watanabe, K Bar-Gill, N

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Publisher:: AMER CHEMICAL SOC
Publication Type:: Journal Article
Citation:: ACS Applied Nano Materials, 2023, 6, (23), pp. 21671-21678
Issue Date:: 2023-12-08

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Field	Value	Language
dc.contributor.author	Zabelotsky, T
dc.contributor.author	Singh, S
dc.contributor.author	Haim, G
dc.contributor.author	Malkinson, R
dc.contributor.author	Kadkhodazadeh, S
dc.contributor.author	Radko, IP
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.author	Steinberg, H
dc.contributor.author	Berg-Sørensen, K
dc.contributor.author	Huck, A
dc.contributor.author	Taniguchi, T
dc.contributor.author	Watanabe, K
dc.contributor.author	Bar-Gill, N
dc.date.accessioned	2024-02-08T05:09:53Z
dc.date.available	2024-02-08T05:09:53Z
dc.date.issued	2023-12-08
dc.identifier.citation	ACS Applied Nano Materials, 2023, 6, (23), pp. 21671-21678
dc.identifier.issn	2574-0970
dc.identifier.issn	2574-0970
dc.identifier.uri	http://hdl.handle.net/10453/175490
dc.description.abstract	Boron vacancies (VB-) in hexagonal boron -nitride (hBN) have sparked great interest in recent years due to their optical and spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other 2D materials, boron vacancies may serve as a precise sensor which can be deployed at very close proximity to many important materials systems. Boron vacancy defects may be produced by a number of existing methods, the use of which may depend on the final application. Any method should reproducibly generate defects with controlled density and desired pattern. To date, however, detailed studies of such methods are missing. In this paper, we study various techniques for the preparation of hBN flakes from bulk crystals and relevant postprocessing treatments, namely, focused ion beam (FIB) implantation, for creation of VB-s as a function of flake thickness and defect concentrations. We find that flake thickness plays an important role when optimizing implantation parameters, while careful sample cleaning proved important to achieve consistent results.
dc.language	English
dc.publisher	AMER CHEMICAL SOC
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation	United States Department of the NavyN629092212028
dc.relation	http://purl.org/au-research/grants/arc/FT220100053
dc.relation.ispartof	ACS Applied Nano Materials
dc.relation.isbasedon	10.1021/acsanm.3c03395
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	3106 Industrial biotechnology
dc.subject.classification	3403 Macromolecular and materials chemistry
dc.subject.classification	4018 Nanotechnology
dc.title	Creation of Boron Vacancies in Hexagonal Boron Nitride Exfoliated from Bulk Crystals for Quantum Sensing
dc.type	Journal Article
utslib.citation.volume	6
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Science
pubs.organisational-group	University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
dc.date.updated	2024-02-08T05:09:51Z
pubs.issue	23
pubs.publication-status	Published
pubs.volume	6
utslib.citation.issue	23

Abstract:

Boron vacancies (VB-) in hexagonal boron -nitride (hBN) have sparked great interest in recent years due to their optical and spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other 2D materials, boron vacancies may serve as a precise sensor which can be deployed at very close proximity to many important materials systems. Boron vacancy defects may be produced by a number of existing methods, the use of which may depend on the final application. Any method should reproducibly generate defects with controlled density and desired pattern. To date, however, detailed studies of such methods are missing. In this paper, we study various techniques for the preparation of hBN flakes from bulk crystals and relevant postprocessing treatments, namely, focused ion beam (FIB) implantation, for creation of VB-s as a function of flake thickness and defect concentrations. We find that flake thickness plays an important role when optimizing implantation parameters, while careful sample cleaning proved important to achieve consistent results.

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http://hdl.handle.net/10453/175490