The Acoustophotoelectric Effect: Efficient Phonon-Photon-Electron Coupling in Zero-Voltage-Biased 2D SnS2 for Broad-Band Photodetection.

Alijani, H; Reineck, P; Komljenovic, R; Russo, SP; Low, MX; Balendhran, S; Crozier, KB; Walia, S; Nash, GR; Yeo, LY; Rezk, AR

The Acoustophotoelectric Effect: Efficient Phonon-Photon-Electron Coupling in Zero-Voltage-Biased 2D SnS2 for Broad-Band Photodetection.

Alijani, H Reineck, P Komljenovic, R Russo, SP Low, MX Balendhran, S Crozier, KB Walia, S Nash, GR Yeo, LY Rezk, AR

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Publisher:: AMER CHEMICAL SOC
Publication Type:: Journal Article
Citation:: ACS Nano, 2023, 17, (19), pp. 19254-19264
Issue Date:: 2023-10-10

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Field	Value	Language
dc.contributor.author	Alijani, H
dc.contributor.author	Reineck, P
dc.contributor.author	Komljenovic, R
dc.contributor.author	Russo, SP
dc.contributor.author	Low, MX
dc.contributor.author	Balendhran, S
dc.contributor.author	Crozier, KB
dc.contributor.author	Walia, S
dc.contributor.author	Nash, GR
dc.contributor.author	Yeo, LY
dc.contributor.author	Rezk, AR
dc.date.accessioned	2024-03-04T02:43:34Z
dc.date.available	2024-03-04T02:43:34Z
dc.date.issued	2023-10-10
dc.identifier.citation	ACS Nano, 2023, 17, (19), pp. 19254-19264
dc.identifier.issn	1936-0851
dc.identifier.issn	1936-086X
dc.identifier.uri	http://hdl.handle.net/10453/176050
dc.description.abstract	Two-dimensional (2D) layered metal dichalcogenides constitute a promising class of materials for photodetector applications due to their excellent optoelectronic properties. The most common photodetectors, which work on the principle of photoconductive or photovoltaic effects, however, require either the application of external voltage biases or built-in electric fields, which makes it challenging to simultaneously achieve high responsivities across broad-band wavelength excitation─especially beyond the material's nominal band gap─while producing low dark currents. In this work, we report the discovery of an intricate phonon-photon-electron coupling─which we term the acoustophotoelectric effect─in SnS2 that facilitates efficient photodetection through the application of 100 MHz order propagating surface acoustic waves (SAWs). This effect not only reduces the band gap of SnS2 but also provides the requisite momentum for indirect band gap transition of the photoexcited charge carriers, to enable broad-band photodetection beyond the visible light range, while maintaining pA-order dark currents─ without the need for any external voltage bias. More specifically, we show in the infrared excitation range that it is possible to achieve up to 8 orders of magnitude improvement in the material's photoresponsivity compared to that previously reported for SnS2-based photodetectors, in addition to exhibiting superior performance compared to most other 2D materials reported to date for photodetection.
dc.format	Print-Electronic
dc.language	eng
dc.publisher	AMER CHEMICAL SOC
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation.ispartof	ACS Nano
dc.relation.isbasedon	10.1021/acsnano.3c06075
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Nanoscience & Nanotechnology
dc.title	The Acoustophotoelectric Effect: Efficient Phonon-Photon-Electron Coupling in Zero-Voltage-Biased 2D SnS2 for Broad-Band Photodetection.
dc.type	Journal Article
utslib.citation.volume	17
utslib.location.activity	United States
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Science
pubs.organisational-group	University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
dc.date.updated	2024-03-04T02:43:31Z
pubs.issue	19
pubs.publication-status	Published
pubs.volume	17
utslib.citation.issue	19

Abstract:

Two-dimensional (2D) layered metal dichalcogenides constitute a promising class of materials for photodetector applications due to their excellent optoelectronic properties. The most common photodetectors, which work on the principle of photoconductive or photovoltaic effects, however, require either the application of external voltage biases or built-in electric fields, which makes it challenging to simultaneously achieve high responsivities across broad-band wavelength excitation─especially beyond the material's nominal band gap─while producing low dark currents. In this work, we report the discovery of an intricate phonon-photon-electron coupling─which we term the acoustophotoelectric effect─in SnS2 that facilitates efficient photodetection through the application of 100 MHz order propagating surface acoustic waves (SAWs). This effect not only reduces the band gap of SnS2 but also provides the requisite momentum for indirect band gap transition of the photoexcited charge carriers, to enable broad-band photodetection beyond the visible light range, while maintaining pA-order dark currents─ without the need for any external voltage bias. More specifically, we show in the infrared excitation range that it is possible to achieve up to 8 orders of magnitude improvement in the material's photoresponsivity compared to that previously reported for SnS2-based photodetectors, in addition to exhibiting superior performance compared to most other 2D materials reported to date for photodetection.

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http://hdl.handle.net/10453/176050