Kinetics of gas mediated electron beam induced etching

Randolph, S; Toth, M; Cullen, J; Chandler, C; Lobo, C

Kinetics of gas mediated electron beam induced etching

Randolph, S Toth, M

Cullen, J Chandler, C Lobo, C

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Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2011, 99 (21)
Issue Date:: 2011-11-21

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Field	Value	Language
dc.contributor.author	Randolph, S	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.contributor.author	Cullen, J	en_US
dc.contributor.author	Chandler, C	en_US
dc.contributor.author	Lobo, C https://orcid.org/0000-0002-2746-1363	en_US
dc.date.issued	2011-11-21	en_US
dc.identifier.citation	Applied Physics Letters, 2011, 99 (21)	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/17972
dc.description.abstract	Electron beam induced etching (EBIE) is a high resolution, direct write, chemical dry etch process in which surface-adsorbed precursor molecules are activated by an electron beam. We show that nanoscale EBIE is rate limited through at least two mechanisms ascribed to adsorbate depletion and the transport of gaseous precursor molecules into an etch pit during etching, respectively. The latter has, to date, not been accounted for in models of EBIE and is needed to reproduce etch kinetics which govern the time-evolution of etch pits, EBIE throughput, and spatial resolution. © 2011 American Institute of Physics.	en_US
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.3662928	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Kinetics of gas mediated electron beam induced etching	en_US
dc.type	Journal Article
utslib.citation.volume	21	en_US
utslib.citation.volume	99	en_US
utslib.for	020404 Electronic and Magnetic Properties of Condensed Matter; Superconductivity	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	closed_access
pubs.issue	21	en_US
pubs.publication-status	Published	en_US
pubs.volume	99	en_US

Abstract:

Electron beam induced etching (EBIE) is a high resolution, direct write, chemical dry etch process in which surface-adsorbed precursor molecules are activated by an electron beam. We show that nanoscale EBIE is rate limited through at least two mechanisms ascribed to adsorbate depletion and the transport of gaseous precursor molecules into an etch pit during etching, respectively. The latter has, to date, not been accounted for in models of EBIE and is needed to reproduce etch kinetics which govern the time-evolution of etch pits, EBIE throughput, and spatial resolution. © 2011 American Institute of Physics.

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http://hdl.handle.net/10453/17972