Distribution of visible luminescence centers in hydrogen-doped ZnO

Lem, LLC; Ton-That, C; Phillips, MR

Distribution of visible luminescence centers in hydrogen-doped ZnO

Lem, LLC Ton-That, C

Phillips, MR

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Publication Type:: Journal Article
Citation:: Journal of Materials Research, 2011, 26 (23), pp. 2912 - 2915
Issue Date:: 2011-12-14

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Field	Value	Language
dc.contributor.author	Lem, LLC	en_US
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.date.issued	2011-12-14	en_US
dc.identifier.citation	Journal of Materials Research, 2011, 26 (23), pp. 2912 - 2915	en_US
dc.identifier.issn	0884-2914	en_US
dc.identifier.uri	http://hdl.handle.net/10453/18015
dc.description.abstract	ZnO crystals have been investigated by scanning cathodoluminescence microscopy and spectroscopy at 80 K following hydrogen incorporation by plasma exposure. The intensity of the ZnO near-band-edge (NBE) emission is greatly enhanced while the defect-related green emission is quenched following plasma treatment. These effects are attributed to the passivation of zinc vacancies by hydrogen. The green and yellow intensities and their intensity ratios to the NBE vary with excitation depth for both undoped and H-doped ZnO crystals. The intensities of the green and yellow emissions exhibit sublinear dependencies on electron beam excitation density while the NBE intensity increases linearly with the excitation density. These saturation effects with increasing excitation density must be taken into account when assessing defects in ZnO by luminescence characterization. © Copyright Materials Research Society 2011.	en_US
dc.relation.ispartof	Journal of Materials Research	en_US
dc.relation.isbasedon	10.1557/jmr.2011.383	en_US
dc.subject.classification	Materials	en_US
dc.title	Distribution of visible luminescence centers in hydrogen-doped ZnO	en_US
dc.type	Journal Article
utslib.citation.volume	23	en_US
utslib.citation.volume	26	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0913 Mechanical Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	open_access
pubs.issue	23	en_US
pubs.publication-status	Published	en_US
pubs.volume	26	en_US

Abstract:

ZnO crystals have been investigated by scanning cathodoluminescence microscopy and spectroscopy at 80 K following hydrogen incorporation by plasma exposure. The intensity of the ZnO near-band-edge (NBE) emission is greatly enhanced while the defect-related green emission is quenched following plasma treatment. These effects are attributed to the passivation of zinc vacancies by hydrogen. The green and yellow intensities and their intensity ratios to the NBE vary with excitation depth for both undoped and H-doped ZnO crystals. The intensities of the green and yellow emissions exhibit sublinear dependencies on electron beam excitation density while the NBE intensity increases linearly with the excitation density. These saturation effects with increasing excitation density must be taken into account when assessing defects in ZnO by luminescence characterization. © Copyright Materials Research Society 2011.

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http://hdl.handle.net/10453/18015