Engineering Boron Vacancy Defects in Boron Nitride Nanotubes.

Hennessey, M; Whitefield, B; Singh, P; Alijani, H; Abe, H; Ohshima, T; Gavin, C; Broadway, DA; Toth, M; Tetienne, J-P; Aharonovich, I; Kianinia, M

Engineering Boron Vacancy Defects in Boron Nitride Nanotubes.

Hennessey, M Whitefield, B Singh, P Alijani, H Abe, H Ohshima, T Gavin, C Broadway, DA Toth, M

Tetienne, J-P Aharonovich, I

Kianinia, M

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Publisher:: AMER CHEMICAL SOC
Publication Type:: Journal Article
Citation:: ACS Appl Mater Interfaces, 2024, 16, (42), pp. 57552-57557
Issue Date:: 2024-10-23

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Field	Value	Language
dc.contributor.author	Hennessey, M
dc.contributor.author	Whitefield, B
dc.contributor.author	Singh, P
dc.contributor.author	Alijani, H
dc.contributor.author	Abe, H
dc.contributor.author	Ohshima, T
dc.contributor.author	Gavin, C
dc.contributor.author	Broadway, DA
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899
dc.contributor.author	Tetienne, J-P
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.author	Kianinia, M https://orcid.org/0000-0003-4073-1492
dc.date.accessioned	2025-01-13T03:41:45Z
dc.date.available	2025-01-13T03:41:45Z
dc.date.issued	2024-10-23
dc.identifier.citation	ACS Appl Mater Interfaces, 2024, 16, (42), pp. 57552-57557
dc.identifier.issn	1944-8244
dc.identifier.issn	1944-8252
dc.identifier.uri	http://hdl.handle.net/10453/183359
dc.description.abstract	Spin defects in hexagonal boron nitride (hBN) are emerging as promising platforms for quantum sensing applications. In particular, the negatively charged boron vacancy (VB-) centers have been engineered in bulk hBN and few-layer hBN flakes, and employed for sensing. Here, we investigate the engineering of VB- spin defects in boron nitride nanotubes (BNNTs). The generated spin defects are distributed along and around the BNNTs. Moreover, in contrast to hBN flakes, the spins in BNNTs exhibit a directional response relative to the direction of a surrounding magnetic field, which is consistent with the tubular geometry. The unique geometry of BNNTs allows for a more controlled and predictable placement of spin defects compared to bulk hBN, paving the way for innovative sensing applications with high spatial resolution and optomechanical studies of spin defects in hBN.
dc.format	Print-Electronic
dc.language	eng
dc.publisher	AMER CHEMICAL SOC
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation	United States Department of the NavyN629092212028
dc.relation	http://purl.org/au-research/grants/arc/FT220100053
dc.relation	http://purl.org/au-research/grants/arc/DP240103127
dc.relation.ispartof	ACS Appl Mater Interfaces
dc.relation.isbasedon	10.1021/acsami.4c12802
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	03 Chemical Sciences, 09 Engineering
dc.subject.classification	Nanoscience & Nanotechnology
dc.subject.classification	34 Chemical sciences
dc.subject.classification	40 Engineering
dc.subject.classification	51 Physical sciences
dc.title	Engineering Boron Vacancy Defects in Boron Nitride Nanotubes.
dc.type	Journal Article
utslib.citation.volume	16
utslib.location.activity	United States
utslib.for	03 Chemical Sciences
utslib.for	09 Engineering
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Science
pubs.organisational-group	University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
dc.date.updated	2025-01-13T03:41:43Z
pubs.issue	42
pubs.publication-status	Published
pubs.volume	16
utslib.citation.issue	42

Abstract:

Spin defects in hexagonal boron nitride (hBN) are emerging as promising platforms for quantum sensing applications. In particular, the negatively charged boron vacancy (VB-) centers have been engineered in bulk hBN and few-layer hBN flakes, and employed for sensing. Here, we investigate the engineering of VB- spin defects in boron nitride nanotubes (BNNTs). The generated spin defects are distributed along and around the BNNTs. Moreover, in contrast to hBN flakes, the spins in BNNTs exhibit a directional response relative to the direction of a surrounding magnetic field, which is consistent with the tubular geometry. The unique geometry of BNNTs allows for a more controlled and predictable placement of spin defects compared to bulk hBN, paving the way for innovative sensing applications with high spatial resolution and optomechanical studies of spin defects in hBN.

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http://hdl.handle.net/10453/183359