Defect passivation and enhanced UV emission in β-Ga<inf>2</inf>O<inf>3</inf> via remote fluorine plasma treatment

Salih, AK; Fiedler, S; Irvine, CP; Matar, F; Phillips, MR; Ton-That, C

Defect passivation and enhanced UV emission in β-Ga<inf>2</inf>O<inf>3</inf> via remote fluorine plasma treatment

Salih, AK Fiedler, S Irvine, CP Matar, F Phillips, MR Ton-That, C

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Publisher:: Elsevier
Publication Type:: Journal Article
Citation:: Applied Surface Science, 2025, 687, pp. 162250
Issue Date:: 2025-04-01

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Field	Value	Language
dc.contributor.author	Salih, AK
dc.contributor.author	Fiedler, S
dc.contributor.author	Irvine, CP
dc.contributor.author	Matar, F
dc.contributor.author	Phillips, MR
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739
dc.date.accessioned	2025-01-31T06:19:50Z
dc.date.available	2025-01-31T06:19:50Z
dc.date.issued	2025-04-01
dc.identifier.citation	Applied Surface Science, 2025, 687, pp. 162250
dc.identifier.issn	0169-4332
dc.identifier.uri	http://hdl.handle.net/10453/184753
dc.description.abstract	This study investigates the incorporation of fluorene (F) donors in β-Ga2O3 and its effects on luminescence, defect structure and carrier dynamics. Monoclinic β-Ga2O3 nanowires (NWs) are synthesized via chemical vapour deposition and subsequently doped with F using remote SF6 plasma treatment, leveraging their nanoscale cross sections. Photoelectron spectroscopy reveals F incorporation at oxygen sites and the formation of strong Ga–F bonds without sulfur contamination, while the monoclinic crystal structure remains intact. The impact of F doping is assessed using hyperspectral cathodoluminescence (CL) mapping and time-resolved spectroscopy of individual NWs. The β-Ga2O3 NWs exhibit a strong characteristic UV peak at 3.40 eV, associated with self-trapped holes, and visible defect-related emissions. After F incorporation, an additional UV emission at 3.64 eV emerges, attributed to shallow F donor-deep acceptor pair recombination, while the defect-related emissions are strongly supressed as F atoms occupy oxygen vacancies. Carrier lifetime increases from 9.2 ns to 17.0 ns with increasing F concentration along the nanowire. The work highlights the utility of F plasma processing to passivate intrinsic defects in Ga2O3 and the influence of F donors on the UV emission of β-Ga2O3.
dc.language	en
dc.publisher	Elsevier
dc.relation	http://purl.org/au-research/grants/arc/DP210101146
dc.relation.ispartof	Applied Surface Science
dc.relation.isbasedon	10.1016/j.apsusc.2024.162250
dc.rights	info:eu-repo/semantics/restrictedAccess
dc.subject.classification	Applied Physics
dc.title	Defect passivation and enhanced UV emission in β-Ga<inf>2</inf>O<inf>3</inf> via remote fluorine plasma treatment
dc.type	Journal Article
utslib.citation.volume	687
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Science
pubs.organisational-group	University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	recently_added	*
dc.date.updated	2025-01-31T06:19:48Z
pubs.publication-status	Accepted
pubs.volume	687

Abstract:

This study investigates the incorporation of fluorene (F) donors in β-Ga2O3 and its effects on luminescence, defect structure and carrier dynamics. Monoclinic β-Ga2O3 nanowires (NWs) are synthesized via chemical vapour deposition and subsequently doped with F using remote SF6 plasma treatment, leveraging their nanoscale cross sections. Photoelectron spectroscopy reveals F incorporation at oxygen sites and the formation of strong Ga–F bonds without sulfur contamination, while the monoclinic crystal structure remains intact. The impact of F doping is assessed using hyperspectral cathodoluminescence (CL) mapping and time-resolved spectroscopy of individual NWs. The β-Ga2O3 NWs exhibit a strong characteristic UV peak at 3.40 eV, associated with self-trapped holes, and visible defect-related emissions. After F incorporation, an additional UV emission at 3.64 eV emerges, attributed to shallow F donor-deep acceptor pair recombination, while the defect-related emissions are strongly supressed as F atoms occupy oxygen vacancies. Carrier lifetime increases from 9.2 ns to 17.0 ns with increasing F concentration along the nanowire. The work highlights the utility of F plasma processing to passivate intrinsic defects in Ga2O3 and the influence of F donors on the UV emission of β-Ga2O3.

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http://hdl.handle.net/10453/184753