Design and analysis of junctionless dielectric modulated double-gate GaNFET biosensor for label-free DNA detection

Hasan, MZ; Raihan, R; Alam, NK; Kaysir, MR; Islam, MS; Mahmud, MAP

Design and analysis of junctionless dielectric modulated double-gate GaNFET biosensor for label-free DNA detection

Hasan, MZ Raihan, R Alam, NK Kaysir, MR Islam, MS Mahmud, MAP

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Publisher:: ELSEVIER
Publication Type:: Journal Article
Citation:: Materials Today Electronics, 2025, 11
Issue Date:: 2025-05-01

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Field	Value	Language
dc.contributor.author	Hasan, MZ
dc.contributor.author	Raihan, R
dc.contributor.author	Alam, NK
dc.contributor.author	Kaysir, MR
dc.contributor.author	Islam, MS
dc.contributor.author	Mahmud, MAP
dc.date.accessioned	2025-10-15T03:51:20Z
dc.date.available	2025-10-15T03:51:20Z
dc.date.issued	2025-05-01
dc.identifier.citation	Materials Today Electronics, 2025, 11
dc.identifier.issn	2772-9494
dc.identifier.issn	2772-9494
dc.identifier.uri	http://hdl.handle.net/10453/190409
dc.description.abstract	The investigation of DNA hybridization spans various scientific domains, offering insights from genomics to diagnostics and pharmacology. Traditional methods involve labeling DNA, but innovative FET devices use label-free techniques. Nanoscale biosensors provide superior speed, sensitivity, cost-effectiveness, and versatility compared to conventional methods. Overcoming challenges like the Short Channel Effect (SCE) is crucial for synthesizing biosensors meeting these criteria. Previous research focused on junctionless double-gate transistors for mitigating SCE and GaN as channel materials for high-speed, low-power applications. However, dealing with negatively charged biomolecules like DNA poses challenges due to conflicting dielectric constant and interface charge effects. To address these challenges, the proposed nanoscale biosensor employs a junctionless dielectric modulated double-gate GaN field-effect transistor (JL-DM-DG GaNFET). This device effectively synergizes conflicting dielectric constant and charge effects, with GaN as the channel material. Simulation results show the n-type JL-DM-DG GaNFET exhibits significant sensitivity to negatively charged DNA, with a greater change in threshold voltage (> 539 mV for k = 1 to k = 15) compared to the p-type (-101 mV for k = 1 to k = 4, and 74.59 mV for k = 4 to k = 15). Specifically, for charge density the n-type device displays a higher sensitivity 1.05 vs. 0.509 for the p-type and for dielectric constant k = 16 (sensitivity 0.8 for n-type vs. 0.4 for p-type). Additionally, the device shows low subthreshold slope (∼ 60 mV/decay) and higher I<inf>on</inf>/I<inf>off</inf> ratio, suggesting faster switching and lower power consumption. In summary, the proposed n-type JL-DM-DG GaNFET holds considerable potential for efficient and reliable DNA detection.
dc.language	English
dc.publisher	ELSEVIER
dc.relation.ispartof	Materials Today Electronics
dc.relation.isbasedon	10.1016/j.mtelec.2025.100144
dc.rights	info:eu-repo/semantics/openAccess
dc.title	Design and analysis of junctionless dielectric modulated double-gate GaNFET biosensor for label-free DNA detection
dc.type	Journal Article
utslib.citation.volume	11
pubs.organisational-group	University of Technology Sydney
pubs.organisational-group	University of Technology Sydney/Faculty of Science
pubs.organisational-group	University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access	*
dc.rights.license	This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0). To view a copy of this license, visit https://creativecommons.org/licenses/by/4.0/
dc.date.updated	2025-10-15T03:51:18Z
pubs.publication-status	Published
pubs.volume	11

Abstract:

The investigation of DNA hybridization spans various scientific domains, offering insights from genomics to diagnostics and pharmacology. Traditional methods involve labeling DNA, but innovative FET devices use label-free techniques. Nanoscale biosensors provide superior speed, sensitivity, cost-effectiveness, and versatility compared to conventional methods. Overcoming challenges like the Short Channel Effect (SCE) is crucial for synthesizing biosensors meeting these criteria. Previous research focused on junctionless double-gate transistors for mitigating SCE and GaN as channel materials for high-speed, low-power applications. However, dealing with negatively charged biomolecules like DNA poses challenges due to conflicting dielectric constant and interface charge effects. To address these challenges, the proposed nanoscale biosensor employs a junctionless dielectric modulated double-gate GaN field-effect transistor (JL-DM-DG GaNFET). This device effectively synergizes conflicting dielectric constant and charge effects, with GaN as the channel material. Simulation results show the n-type JL-DM-DG GaNFET exhibits significant sensitivity to negatively charged DNA, with a greater change in threshold voltage (> 539 mV for k = 1 to k = 15) compared to the p-type (-101 mV for k = 1 to k = 4, and 74.59 mV for k = 4 to k = 15). Specifically, for charge density the n-type device displays a higher sensitivity 1.05 vs. 0.509 for the p-type and for dielectric constant k = 16 (sensitivity 0.8 for n-type vs. 0.4 for p-type). Additionally, the device shows low subthreshold slope (∼ 60 mV/decay) and higher Ion/Ioff ratio, suggesting faster switching and lower power consumption. In summary, the proposed n-type JL-DM-DG GaNFET holds considerable potential for efficient and reliable DNA detection.

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http://hdl.handle.net/10453/190409