Cathodoluminescence characterisation of vapour transport grown ZnO structures
- Publication Type:
- Conference Proceeding
- ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology, 2010, pp. 207 - 209
- Issue Date:
Copyright Clearance Process
- Recently Added
- In Progress
- Closed Access
This item is closed access and not available.
ZnO structures grown under controlled vapour-phase transport growth conditions were characterised by electron microscopy and high-resolution cathodoluminescence techniques. Variations in the defect related emission and morphology were observed to be dependent on the distance from the source material. Annealing of grown structures under oxygen eliminated the defect emission. These experimental observations suggest that oxygen deficiency in ZnO is linked to the defect related emission, and that defect emission is strongly influenced by the oxygen gas content during vapour transport growth. © 2010 IEEE.
Please use this identifier to cite or link to this item: