Cathodoluminescence characterisation of vapour transport grown ZnO structures

Foley, M; Ton-That, C; Phillips, MR

Cathodoluminescence characterisation of vapour transport grown ZnO structures

Foley, M Ton-That, C

Phillips, MR

Permalink

Publication Type:: Conference Proceeding
Citation:: ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology, 2010, pp. 207 - 209
Issue Date:: 2010-12-01

Closed Access

	Filename	Description	Size
	2010006042OK.pdf		4.13 MB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Foley, M	en_US
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.date.issued	2010-12-01	en_US
dc.identifier.citation	ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology, 2010, pp. 207 - 209	en_US
dc.identifier.isbn	9781424452620	en_US
dc.identifier.uri	http://hdl.handle.net/10453/19332
dc.description.abstract	ZnO structures grown under controlled vapour-phase transport growth conditions were characterised by electron microscopy and high-resolution cathodoluminescence techniques. Variations in the defect related emission and morphology were observed to be dependent on the distance from the source material. Annealing of grown structures under oxygen eliminated the defect emission. These experimental observations suggest that oxygen deficiency in ZnO is linked to the defect related emission, and that defect emission is strongly influenced by the oxygen gas content during vapour transport growth. © 2010 IEEE.	en_US
dc.relation.ispartof	ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology	en_US
dc.relation.isbasedon	10.1109/ICONN.2010.6045254	en_US
dc.title	Cathodoluminescence characterisation of vapour transport grown ZnO structures	en_US
dc.type	Conference Proceeding
utslib.for	1007 Nanotechnology	en_US
dc.location.activity	Sydney, Australia	en_US
dc.location.activity	Sharjah, U ARAB EMIRATES
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US

Abstract:

ZnO structures grown under controlled vapour-phase transport growth conditions were characterised by electron microscopy and high-resolution cathodoluminescence techniques. Variations in the defect related emission and morphology were observed to be dependent on the distance from the source material. Annealing of grown structures under oxygen eliminated the defect emission. These experimental observations suggest that oxygen deficiency in ZnO is linked to the defect related emission, and that defect emission is strongly influenced by the oxygen gas content during vapour transport growth. © 2010 IEEE.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/19332