Monolithic Microwave Integrated Circuits for 5G and Satellite Communication

Chau, Quoc Toan

Monolithic Microwave Integrated Circuits for 5G and Satellite Communication

Chau, Quoc Toan

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Publication Type:: Thesis
Issue Date:: 2025

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Field	Value	Language
dc.contributor.author	Chau, Quoc Toan
dc.date.accessioned	2026-10-26T23:58:04Z
dc.date.available	2026-10-26T23:58:04Z
dc.date.issued	2025
dc.identifier.uri	http://hdl.handle.net/10453/197256
dc.description	University of Technology Sydney. Faculty of Engineering and Information Technology.	en_US.UTF-8
dc.description.abstract	Designing high-frequency microwave amplifiers remains challenging as modern 5G networks and satellite communication (SATCOM) systems demand higher data rates, broader bandwidths, and robust performance. This thesis investigates three monolithic microwave integrated circuit (MMIC) amplifier designs: two GaAs-based and one GaN-based. These designs address two critical frequency bands: the millimetre-wave W-band (75 – 110 GHz) for high-capacity links and the K-band (18 – 27 GHz) for next-generation 5G fronthaul and SATCOM payloads. The results confirm GaAs’s suitability for low-noise front-ends and GaN’s superiority for high-power amplification. The first design is a 75 – 85 GHz GaAs amplifier targeting high-throughput systems. By employing broadband matching and parasitic control, the design achieves unconditional stability and competitive noise performance, proving GaAs's viability for high-frequency receiver stages despite increasing passive losses at W-band. The second design is a 17 – 22 GHz GaAs low-noise amplifier (LNA). Achieving a noise figure below 1.3 dB required rigorous optimisation of transistor sizing and electromagnetic simulation, reinforcing GaAs as the leading technology for high-gain K-band front-ends. The third design is a 17 – 22 GHz GaN power amplifier. Leveraging GaN’s wide bandgap, the design utilizes load-pull optimisation and harmonic tuning to deliver high output power while meeting strict efficiency and spectral requirements for 5G and SATCOM transmitters. Initially focusing on the extreme electrical density of the W-band, this research establishes robust EM-based modeling and design methods. these methodologies are then transferred and refined for K-band applications where increased device flexibility enables high linearity and low noise. Demonstrating successful MMICs in both bands validates the methodology’s reliability while responding to the multi-band demands of future space and terrestrial systems. These practical contributions highlight the complementary roles of GaAs and GaN in modern telecommunications. The main original contributions of this thesis include the practical demonstration of a 75-85 GHz GaAs driver amplifier achieving unconditional stability with competitive flat gain, a 17-22 GHz GaAs single-supply LNA achieving a noise figure below 1.3 dB through optimized inductive source degeneration and EM-aware packaging co-design, and a 17-22 GHz GaN power amplifier delivering over 30 dBm saturated output power with >30% PAE. These designs validate a comprehensive methodology integrating full-wave EM simulation, rigorous stability analysis, and tailored biasing strategies for next-generation space and terrestrial mm-wave front-ends.	en_US.UTF-8
dc.format	Thesis (PhD)
dc.language.iso	en_US	en_US.UTF-8
dc.relation	https://opus.lib.uts.edu.au/bitstream/10453/197256/1/thesis.pdf
dc.rights	info:eu-repo/semantics/openAccess
dc.rights	The author owns the copyright in this thesis including all reproduction and reuse rights for the work. The work may not be altered without the permission of the copyright owner. Attribution is essential when quoting or paraphrasing from this thesis.
dc.rights	© 2025 Quoc Toan Chau
dc.rights	au.edu.uts.lib/cph
dc.title	Monolithic Microwave Integrated Circuits for 5G and Satellite Communication	en_US.UTF-8
dc.type	Thesis
utslib.copyright.status	open_access	*

Abstract:

Designing high-frequency microwave amplifiers remains challenging as modern 5G networks and satellite communication (SATCOM) systems demand higher data rates, broader bandwidths, and robust performance. This thesis investigates three monolithic microwave integrated circuit (MMIC) amplifier designs: two GaAs-based and one GaN-based. These designs address two critical frequency bands: the millimetre-wave W-band (75 – 110 GHz) for high-capacity links and the K-band (18 – 27 GHz) for next-generation 5G fronthaul and SATCOM payloads. The results confirm GaAs’s suitability for low-noise front-ends and GaN’s superiority for high-power amplification. The first design is a 75 – 85 GHz GaAs amplifier targeting high-throughput systems. By employing broadband matching and parasitic control, the design achieves unconditional stability and competitive noise performance, proving GaAs's viability for high-frequency receiver stages despite increasing passive losses at W-band. The second design is a 17 – 22 GHz GaAs low-noise amplifier (LNA). Achieving a noise figure below 1.3 dB required rigorous optimisation of transistor sizing and electromagnetic simulation, reinforcing GaAs as the leading technology for high-gain K-band front-ends. The third design is a 17 – 22 GHz GaN power amplifier. Leveraging GaN’s wide bandgap, the design utilizes load-pull optimisation and harmonic tuning to deliver high output power while meeting strict efficiency and spectral requirements for 5G and SATCOM transmitters. Initially focusing on the extreme electrical density of the W-band, this research establishes robust EM-based modeling and design methods. these methodologies are then transferred and refined for K-band applications where increased device flexibility enables high linearity and low noise. Demonstrating successful MMICs in both bands validates the methodology’s reliability while responding to the multi-band demands of future space and terrestrial systems. These practical contributions highlight the complementary roles of GaAs and GaN in modern telecommunications. The main original contributions of this thesis include the practical demonstration of a 75-85 GHz GaAs driver amplifier achieving unconditional stability with competitive flat gain, a 17-22 GHz GaAs single-supply LNA achieving a noise figure below 1.3 dB through optimized inductive source degeneration and EM-aware packaging co-design, and a 17-22 GHz GaN power amplifier delivering over 30 dBm saturated output power with >30% PAE. These designs validate a comprehensive methodology integrating full-wave EM simulation, rigorous stability analysis, and tailored biasing strategies for next-generation space and terrestrial mm-wave front-ends.

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