Doping properties of hydrogen in ZnO

Weston, L; Ton-That, C; Phillips, MR

Doping properties of hydrogen in ZnO

Weston, L Ton-That, C

Phillips, MR

Permalink

Publication Type:: Journal Article
Citation:: Journal of Materials Research, 2012, 27 (17), pp. 2220 - 2224
Issue Date:: 2012-09-14

Closed Access

	Filename	Description	Size
	2011006362OK.pdf		565.04 kB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Weston, L	en_US
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.date.issued	2012-09-14	en_US
dc.identifier.citation	Journal of Materials Research, 2012, 27 (17), pp. 2220 - 2224	en_US
dc.identifier.issn	0884-2914	en_US
dc.identifier.uri	http://hdl.handle.net/10453/22040
dc.description.abstract	The doping properties and stability of hydrogen in zinc oxide (ZnO) crystals have been investigated by cathodoluminescence (CL) spectroscopy. Hydrogen incorporation was achieved by hydrogen plasma at 200 °C. The ZnO near-band-edge (NBE) peak is dramatically enhanced, while the green emission at 2.4 eV is quenched with increasing hydrogen incorporation. These effects are attributed to hydrogen passivating green luminescence centers, which are most likely negatively charged zinc vacancy defects. E-beam irradiation of H-doped ZnO crystals by an intense electron beam with μW power reverses the hydrogen doping process. This effect is ascribed to the dissociation of H-related defects, formation of Chidden H2, and electromigration of H + under the influence of the local trapped charge-induced electric field. These results highlight the potential to modify the local luminescent properties of ZnO by e-beam irradiation. © 2012 Materials Research Society.	en_US
dc.relation.ispartof	Journal of Materials Research	en_US
dc.relation.isbasedon	10.1557/jmr.2012.192	en_US
dc.subject.classification	Materials	en_US
dc.title	Doping properties of hydrogen in ZnO	en_US
dc.type	Journal Article
utslib.citation.volume	17	en_US
utslib.citation.volume	27	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0913 Mechanical Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	17	en_US
pubs.publication-status	Published	en_US
pubs.volume	27	en_US

Abstract:

The doping properties and stability of hydrogen in zinc oxide (ZnO) crystals have been investigated by cathodoluminescence (CL) spectroscopy. Hydrogen incorporation was achieved by hydrogen plasma at 200 °C. The ZnO near-band-edge (NBE) peak is dramatically enhanced, while the green emission at 2.4 eV is quenched with increasing hydrogen incorporation. These effects are attributed to hydrogen passivating green luminescence centers, which are most likely negatively charged zinc vacancy defects. E-beam irradiation of H-doped ZnO crystals by an intense electron beam with μW power reverses the hydrogen doping process. This effect is ascribed to the dissociation of H-related defects, formation of Chidden H2, and electromigration of H + under the influence of the local trapped charge-induced electric field. These results highlight the potential to modify the local luminescent properties of ZnO by e-beam irradiation. © 2012 Materials Research Society.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/22040