Effects of oxygen on electron beam induced deposition of SiO<inf>2</inf>using physisorbed and chemisorbed tetraethoxysilane

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Journal Article
Applied Physics Letters, 2012, 101 (21)
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Electron beam induced deposition (EBID) is limited by low throughput and purity of as-grown material. Co-injection of O2with the growth precursor is known to increase both the purity and deposition rate of materials such as SiO2at room temperature. Here, we show that O2inhibits rather than enhances EBID from tetraethoxysilane (TEOS) precursor at elevated temperatures. This behavior is attributed to surface site competition between chemisorbates at elevated temperature, and TEOS decomposition by atomic oxygen produced through electron dissociation of physisorbed O2at room temperature. © 2012 American Institute of Physics.
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