Effects of oxygen on electron beam induced deposition of SiO<inf>2</inf> using physisorbed and chemisorbed tetraethoxysilane

Bishop, J; Toth, M; Phillips, M; Lobo, C

Effects of oxygen on electron beam induced deposition of SiO<inf>2</inf> using physisorbed and chemisorbed tetraethoxysilane

Bishop, J Toth, M

Phillips, M

Lobo, C

Permalink

Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2012, 101 (21)
Issue Date:: 2012-11-19

Closed Access

	Filename	Description	Size
	2012000001OK.pdf		1.14 MB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Bishop, J	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.contributor.author	Phillips, M https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Lobo, C https://orcid.org/0000-0002-2746-1363	en_US
dc.date.issued	2012-11-19	en_US
dc.identifier.citation	Applied Physics Letters, 2012, 101 (21)	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/23014
dc.description.abstract	Electron beam induced deposition (EBID) is limited by low throughput and purity of as-grown material. Co-injection of O2 with the growth precursor is known to increase both the purity and deposition rate of materials such as SiO2 at room temperature. Here, we show that O2 inhibits rather than enhances EBID from tetraethoxysilane (TEOS) precursor at elevated temperatures. This behavior is attributed to surface site competition between chemisorbates at elevated temperature, and TEOS decomposition by atomic oxygen produced through electron dissociation of physisorbed O2 at room temperature. © 2012 American Institute of Physics.	en_US
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.4767521	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Effects of oxygen on electron beam induced deposition of SiO<inf>2</inf> using physisorbed and chemisorbed tetraethoxysilane	en_US
dc.type	Journal Article
utslib.citation.volume	21	en_US
utslib.citation.volume	101	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	closed_access
pubs.issue	21	en_US
pubs.publication-status	Published	en_US
pubs.volume	101	en_US

Abstract:

Electron beam induced deposition (EBID) is limited by low throughput and purity of as-grown material. Co-injection of O2 with the growth precursor is known to increase both the purity and deposition rate of materials such as SiO2 at room temperature. Here, we show that O2 inhibits rather than enhances EBID from tetraethoxysilane (TEOS) precursor at elevated temperatures. This behavior is attributed to surface site competition between chemisorbates at elevated temperature, and TEOS decomposition by atomic oxygen produced through electron dissociation of physisorbed O2 at room temperature. © 2012 American Institute of Physics.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/23014