Type I and type II alignment of the light hole band in In<inf>0.15</inf>Ga<inf>0.85</inf>As/GaAs and in In<inf>0.15</inf>Ga<inf>0.85</inf>As/Al<inf>0.15</inf>Ga<inf>0.85</inf>As strained quantum wells

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Journal Article
Journal of Electronic Materials, 1997, 26 (8), pp. 922 - 927
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We present results of photoluminescence and cathodoluminescence measurements of strained undoped In0.15Ga0.85AsXGaAs and In0.15Ga0.85As/Al0.15Ga0.85As quantum well structures, designed to throw light on the current controversy over light-hole band alignment at low In content. We compare these data with theoretical calculations of the confined state energies within the eight band effective mass approximation. Our analysis shows that for In0.15Ga0 85As/GaAs, the observed two transitions are consistent with either type I or type II alignment of the light hole band for band offset ratios within the accepted range. In the case of In0.15Ga0 85As/Al0.15Ga0 85As, however, our results clearly indicate type II alignment for the light hole band. We derive the band offset ratio Q, defined here as Q = ΔEc/ΔEg where ΔEc is the conduction band offset and ΔEg is the bandgap difference between the quantum well and the barrier in the presence of strain, for the In0.15Ga0.85As/Al0.15Ga0.85As system to be Q = 0.83 and discuss it in the context of the common anion rule.
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