Dynamic surface site activation: A rate limiting process in electron beam induced etching

Publication Type:
Journal Article
ACS Applied Materials and Interfaces, 2013, 5 (16), pp. 8002 - 8007
Issue Date:
Full metadata record
We report a new mechanism that limits the rate of electron beam induced etching (EBIE). Typically, the etch rate is assumed to scale directly with the precursor adsorbate dissociation rate. Here, we show that this is a special case, and that the rate can instead be limited by the concentration of active sites at the surface. Novel etch kinetics are expected if surface sites are activated during EBIE, and observed experimentally using the electron sensitive material ultra nanocrystalline diamond (UNCD). In practice, etch kinetics are of interest because they affect resolution, throughput, proximity effects, and the topography of nanostructures and nanostructured devices fabricated by EBIE. © 2013 American Chemical Society.
Please use this identifier to cite or link to this item: