Fe-centers in GaN as candidates for spintronics applications

Publication Type:
Conference Proceeding
Citation:
Materials Research Society Symposium Proceedings, 2006, 892 pp. 131 - 136
Issue Date:
2006-05-16
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The potential use of Fe doped GaN for spintronics applications requires a complete understanding of the electronic structure of Fe in all of its charge states. To address these issues, a sel of 400 μm thick freestanding HVPE grown GaN:Fe crystals with different Fe-concentration levels ranging from 5×1017cm-3to 2×1020cm-3was studied by means of photoluminescence. photoluminescence excitation (PLE) and Fourier transform infrared (FTIR) transmission experiments. The Fe3+/2+charge transfer (CT) level was determined to be at 2.80 ± 0.01 eV above the valence band maximum considerably lower than the previously reported value of 3.17 ± 0.10 eV. A bound state of the form (Fe2+, l1VB) with a binding energy of 50 ± 10 meV has been established as an excited state of Fe3+, FTIR transmission measurements revealed an internal (5E -5T2) transition of Fe2+around 400 eV which, until now, was believed to be degenerate with the conduction band. Consequently, a second CT band was detected in PLE spectra. © 2006 Materials Research Society.
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