Fe-centers in GaN as candidates for spintronics applications

Mnlguth, E; Hoffmann, A; Phillips, M; Gehlhoff, W

Fe-centers in GaN as candidates for spintronics applications

Mnlguth, E Hoffmann, A Phillips, M

Gehlhoff, W

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Publication Type:: Conference Proceeding
Citation:: Materials Research Society Symposium Proceedings, 2006, 892 pp. 131 - 136
Issue Date:: 2006-05-16

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Field	Value	Language
dc.contributor.author	Mnlguth, E	en_US
dc.contributor.author	Hoffmann, A	en_US
dc.contributor.author	Phillips, M https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Gehlhoff, W	en_US
dc.date.issued	2006-05-16	en_US
dc.identifier.citation	Materials Research Society Symposium Proceedings, 2006, 892 pp. 131 - 136	en_US
dc.identifier.isbn	1558998462	en_US
dc.identifier.isbn	9781558998469	en_US
dc.identifier.issn	0272-9172	en_US
dc.identifier.uri	http://hdl.handle.net/10453/2793
dc.description.abstract	The potential use of Fe doped GaN for spintronics applications requires a complete understanding of the electronic structure of Fe in all of its charge states. To address these issues, a sel of 400 μm thick freestanding HVPE grown GaN:Fe crystals with different Fe-concentration levels ranging from 5×1017 cm-3 to 2×1020 cm -3 was studied by means of photoluminescence. photoluminescence excitation (PLE) and Fourier transform infrared (FTIR) transmission experiments. The Fe3+/2+ charge transfer (CT) level was determined to be at 2.80 ± 0.01 eV above the valence band maximum considerably lower than the previously reported value of 3.17 ± 0.10 eV. A bound state of the form (Fe2+, l1VB) with a binding energy of 50 ± 10 meV has been established as an excited state of Fe3+, FTIR transmission measurements revealed an internal (5E - 5T2) transition of Fe2+ around 400 eV which, until now, was believed to be degenerate with the conduction band. Consequently, a second CT band was detected in PLE spectra. © 2006 Materials Research Society.	en_US
dc.relation	http://purl.org/au-research/grants/arc/LE0560850
dc.relation.ispartof	Materials Research Society Symposium Proceedings	en_US
dc.title	Fe-centers in GaN as candidates for spintronics applications	en_US
dc.type	Conference Proceeding
utslib.citation.volume	892	en_US
utslib.for	1007 Nanotechnology	en_US
dc.location.activity	Boston, MA	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	open_access
pubs.publication-status	Published	en_US
pubs.volume	892	en_US

Abstract:

The potential use of Fe doped GaN for spintronics applications requires a complete understanding of the electronic structure of Fe in all of its charge states. To address these issues, a sel of 400 μm thick freestanding HVPE grown GaN:Fe crystals with different Fe-concentration levels ranging from 5×1017 cm-3 to 2×1020 cm -3 was studied by means of photoluminescence. photoluminescence excitation (PLE) and Fourier transform infrared (FTIR) transmission experiments. The Fe3+/2+ charge transfer (CT) level was determined to be at 2.80 ± 0.01 eV above the valence band maximum considerably lower than the previously reported value of 3.17 ± 0.10 eV. A bound state of the form (Fe2+, l1VB) with a binding energy of 50 ± 10 meV has been established as an excited state of Fe3+, FTIR transmission measurements revealed an internal (5E - 5T2) transition of Fe2+ around 400 eV which, until now, was believed to be degenerate with the conduction band. Consequently, a second CT band was detected in PLE spectra. © 2006 Materials Research Society.

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http://hdl.handle.net/10453/2793