Fe-centers in GaN as candidates for spintronics applications

Materials Research Society
Publication Type:
Conference Proceeding
GaN, AlN, InN And Related Materials, 2006, pp. 131 - 136
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The potential use of Fe doped GaN for spintronics applications requires a complete understanding of the electronic structure of Fe in all of its charge states. To address these issues, a set of 400 mu m thick freestanding HVPE grown GaN:Fe crystals with
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