Producing optimized ensembles of nitrogen-vacancy color centers for quantum information applications

Aharonovich, I; Santori, C; Fairchild, BA; Orwa, J; Ganesan, K; Fu, KMC; Beausoleil, RG; Greentree, AD; Prawer, S

Producing optimized ensembles of nitrogen-vacancy color centers for quantum information applications

Aharonovich, I

Santori, C Fairchild, BA Orwa, J Ganesan, K Fu, KMC Beausoleil, RG Greentree, AD Prawer, S

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Publication Type:: Journal Article
Citation:: Journal of Applied Physics, 2009, 106 (12)
Issue Date:: 2009-12-01

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Field	Value	Language
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.contributor.author	Santori, C	en_US
dc.contributor.author	Fairchild, BA	en_US
dc.contributor.author	Orwa, J	en_US
dc.contributor.author	Ganesan, K	en_US
dc.contributor.author	Fu, KMC	en_US
dc.contributor.author	Beausoleil, RG	en_US
dc.contributor.author	Greentree, AD	en_US
dc.contributor.author	Prawer, S	en_US
dc.date.issued	2009-12-01	en_US
dc.identifier.citation	Journal of Applied Physics, 2009, 106 (12)	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://hdl.handle.net/10453/29104
dc.description.abstract	Quantum information applications place stringent demands on the development of platforms that can host them. Color centers in diamond have been identified as important media for quantum information processing. Accordingly, the photoluminescence properties of nitrogen-vacancy (N-V) centers in diamond created by implantation and annealing are studied at cryogenic temperatures (below 10 K). We examine high pressure high temperature and chemical vapor deposition synthetic diamonds with varying nitrogen concentration and present an accurate method to estimate the concentration of the (N-V) centers created by ion implantation. The ion irradiation route produced up to 6 ppm of optically active (N-V) centers, while nitrogen implantation yielded up to 3 ppm of optically active (N-V) with 8% conversion efficiency. However, a broadening of the (N-V) - zero phonon line was observed in all samples. © 2009 American Institute of Physics.	en_US
dc.relation.ispartof	Journal of Applied Physics	en_US
dc.relation.isbasedon	10.1063/1.3271579	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Producing optimized ensembles of nitrogen-vacancy color centers for quantum information applications	en_US
dc.type	Journal Article
utslib.citation.volume	12	en_US
utslib.citation.volume	106	en_US
utslib.for	0206 Quantum Physics	en_US
utslib.for	01 Mathematical Sciences	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.issue	12	en_US
pubs.publication-status	Published	en_US
pubs.volume	106	en_US

Abstract:

Quantum information applications place stringent demands on the development of platforms that can host them. Color centers in diamond have been identified as important media for quantum information processing. Accordingly, the photoluminescence properties of nitrogen-vacancy (N-V) centers in diamond created by implantation and annealing are studied at cryogenic temperatures (below 10 K). We examine high pressure high temperature and chemical vapor deposition synthetic diamonds with varying nitrogen concentration and present an accurate method to estimate the concentration of the (N-V) centers created by ion implantation. The ion irradiation route produced up to 6 ppm of optically active (N-V) centers, while nitrogen implantation yielded up to 3 ppm of optically active (N-V) with 8% conversion efficiency. However, a broadening of the (N-V) - zero phonon line was observed in all samples. © 2009 American Institute of Physics.

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http://hdl.handle.net/10453/29104