Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing

Orwa, JO; Santori, C; Fu, KMC; Gibson, B; Simpson, D; Aharonovich, I; Stacey, A; Cimmino, A; Balog, P; Markham, M; Twitchen, D; Greentree, AD; Beausoleil, RG; Prawer, S

Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing

Orwa, JO Santori, C Fu, KMC Gibson, B Simpson, D Aharonovich, I

Stacey, A Cimmino, A Balog, P Markham, M Twitchen, D Greentree, AD Beausoleil, RG Prawer, S

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Publication Type:: Journal Article
Citation:: Journal of Applied Physics, 2011, 109 (8)
Issue Date:: 2011-04-15

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Field	Value	Language
dc.contributor.author	Orwa, JO	en_US
dc.contributor.author	Santori, C	en_US
dc.contributor.author	Fu, KMC	en_US
dc.contributor.author	Gibson, B	en_US
dc.contributor.author	Simpson, D	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.contributor.author	Stacey, A	en_US
dc.contributor.author	Cimmino, A	en_US
dc.contributor.author	Balog, P	en_US
dc.contributor.author	Markham, M	en_US
dc.contributor.author	Twitchen, D	en_US
dc.contributor.author	Greentree, AD	en_US
dc.contributor.author	Beausoleil, RG	en_US
dc.contributor.author	Prawer, S	en_US
dc.date.issued	2011-04-15	en_US
dc.identifier.citation	Journal of Applied Physics, 2011, 109 (8)	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://hdl.handle.net/10453/29106
dc.description.abstract	The negatively-charged nitrogen-vacancy (NV) center is the most studied optical center in diamond and is very important for applications in quantum information science. Many proposals for integrating NV centers in quantum and sensing applications rely on their tailored fabrication in ultra pure host material. In this study, we use ion implantation to controllably introduce nitrogen into high purity, low nitrogen chemical vapor deposition diamond samples. The properties of the resulting NV centers are studied as a function of implantation temperature, annealing temperature, and implantation fluence. We compare the implanted NV centers with native NV centers present deep in the bulk of the as-grown samples. The results for implanted NV centers are promising but indicate, at this stage, that the deep native NV centers possess overall superior optical properties. In particular, the implanted NV centers obtained after annealing at 2000 °C under a stabilizing pressure of 8 GPa showed an ensemble linewidth of 0.17 nm compared to 0.61 nm after annealing at 1000 °C. Over the same temperature range, the ensemble NV-/NV 0 ratio increased by a factor of ∼5, although this was accompanied by an overall decrease in the NV count. © 2011 American Institute of Physics.	en_US
dc.relation.ispartof	Journal of Applied Physics	en_US
dc.relation.isbasedon	10.1063/1.3573768	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing	en_US
dc.type	Journal Article
utslib.citation.volume	8	en_US
utslib.citation.volume	109	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	01 Mathematical Sciences	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.issue	8	en_US
pubs.publication-status	Published	en_US
pubs.volume	109	en_US

Abstract:

The negatively-charged nitrogen-vacancy (NV) center is the most studied optical center in diamond and is very important for applications in quantum information science. Many proposals for integrating NV centers in quantum and sensing applications rely on their tailored fabrication in ultra pure host material. In this study, we use ion implantation to controllably introduce nitrogen into high purity, low nitrogen chemical vapor deposition diamond samples. The properties of the resulting NV centers are studied as a function of implantation temperature, annealing temperature, and implantation fluence. We compare the implanted NV centers with native NV centers present deep in the bulk of the as-grown samples. The results for implanted NV centers are promising but indicate, at this stage, that the deep native NV centers possess overall superior optical properties. In particular, the implanted NV centers obtained after annealing at 2000 °C under a stabilizing pressure of 8 GPa showed an ensemble linewidth of 0.17 nm compared to 0.61 nm after annealing at 1000 °C. Over the same temperature range, the ensemble NV-/NV 0 ratio increased by a factor of ∼5, although this was accompanied by an overall decrease in the NV count. © 2011 American Institute of Physics.

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http://hdl.handle.net/10453/29106