Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing

Publisher:
American Institute of Physics
Publication Type:
Journal Article
Citation:
Journal of Applied Physics, 2011, 109 (8), pp. 083530 - ?
Issue Date:
2011-01
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The negatively-charged nitrogen-vacancy (NV) center is the most studied optical center in diamond and is very important for applications in quantum information science. Many proposals for integrating NV centers in quantum and sensing applications rely on their tailored fabrication in ultra pure host material. In this study, we use ion implantation to controllably introduce nitrogen into high purity, low nitrogen chemical vapor deposition diamond samples. The properties of the resulting NV centers are studied as a function of implantation temperature, annealing temperature, and implantation fluence. We compare the implanted NV centers with native NV centers present deep in the bulk of the as-grown samples. The results for implanted NV centers are promising but indicate, at this stage, that the deep native NV centers possess overall superior optical properties. In particular, the implanted NV centers obtained after annealing at 2000 !C under a stabilizing pressure of 8 GPa showed an ensemble linewidth of 0.17 nm compared to 0.61 nm after annealing at 1000 !C. Over the same temperature range, the ensemble NV"/NV0 ratio increased by a factor of #5, although this was accompanied by an overall decrease in the NV count.
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