Nickel related optical centres in diamond created by ion implantation

Orwa, JO; Aharonovich, I; Jelezko, F; Balasubramanian, G; Balog, P; Markham, M; Twitchen, DJ; Greentree, AD; Prawer, S

Nickel related optical centres in diamond created by ion implantation

Orwa, JO Aharonovich, I

Jelezko, F Balasubramanian, G Balog, P Markham, M Twitchen, DJ Greentree, AD Prawer, S

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Publication Type:: Journal Article
Citation:: Journal of Applied Physics, 2010, 107 (9)
Issue Date:: 2010-05-01

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Field	Value	Language
dc.contributor.author	Orwa, JO	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.contributor.author	Jelezko, F	en_US
dc.contributor.author	Balasubramanian, G	en_US
dc.contributor.author	Balog, P	en_US
dc.contributor.author	Markham, M	en_US
dc.contributor.author	Twitchen, DJ	en_US
dc.contributor.author	Greentree, AD	en_US
dc.contributor.author	Prawer, S	en_US
dc.date.issued	2010-05-01	en_US
dc.identifier.citation	Journal of Applied Physics, 2010, 107 (9)	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://hdl.handle.net/10453/29108
dc.description.abstract	Ni-related optical centres in diamond are promising as alternatives to the nitrogen vacancy (NV) centre for quantum applications and biomarking. In order to achieve the reliability and reproducibility required, a method for producing the Ni-related centres in a controllable manner needs to be established. In this study, we have attempted this control by implanting high purity CVD diamond samples with Ni and N followed by thermal annealing. Samples implanted with Ni show a new Ni-related PL peak centered at 711 nm and a well known doublet at 883/885 nm along with weak NV luminescence. The optical properties of the two Ni-related defects are investigated. In particular, an excited state lifetime of the 883/885 nm peak is measured to be 11.6 ns. © 2010 American Institute of Physics.	en_US
dc.relation.ispartof	Journal of Applied Physics	en_US
dc.relation.isbasedon	10.1063/1.3357374	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Nickel related optical centres in diamond created by ion implantation	en_US
dc.type	Journal Article
utslib.citation.volume	9	en_US
utslib.citation.volume	107	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	01 Mathematical Sciences	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.issue	9	en_US
pubs.publication-status	Published	en_US
pubs.volume	107	en_US

Abstract:

Ni-related optical centres in diamond are promising as alternatives to the nitrogen vacancy (NV) centre for quantum applications and biomarking. In order to achieve the reliability and reproducibility required, a method for producing the Ni-related centres in a controllable manner needs to be established. In this study, we have attempted this control by implanting high purity CVD diamond samples with Ni and N followed by thermal annealing. Samples implanted with Ni show a new Ni-related PL peak centered at 711 nm and a well known doublet at 883/885 nm along with weak NV luminescence. The optical properties of the two Ni-related defects are investigated. In particular, an excited state lifetime of the 883/885 nm peak is measured to be 11.6 ns. © 2010 American Institute of Physics.

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http://hdl.handle.net/10453/29108