Integration of quantum dot devices by selective area epitaxy

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Conference Proceeding
Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, 2006, pp. 442 - 445
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The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide. © 2006 IEEE.
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