Integration of quantum dot devices by selective area epitaxy

Mokkapati, S; Tan, HH; Jagadish, C; McBean, KE; Phillips, MR

Integration of quantum dot devices by selective area epitaxy

Mokkapati, S Tan, HH Jagadish, C McBean, KE

Phillips, MR

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Publication Type:: Conference Proceeding
Citation:: Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, 2006, pp. 442 - 445
Issue Date:: 2006-12-01

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Field	Value	Language
dc.contributor.author	Mokkapati, S	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Jagadish, C	en_US
dc.contributor.author	McBean, KE https://orcid.org/0000-0001-7496-8151	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.date.issued	2006-12-01	en_US
dc.identifier.citation	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, 2006, pp. 442 - 445	en_US
dc.identifier.isbn	1424404533	en_US
dc.identifier.isbn	9781424404537	en_US
dc.identifier.uri	http://hdl.handle.net/10453/2912
dc.description.abstract	The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide. © 2006 IEEE.	en_US
dc.relation	http://purl.org/au-research/grants/arc/LE0560850
dc.relation.ispartof	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN	en_US
dc.relation.isbasedon	10.1109/ICONN.2006.340648	en_US
dc.title	Integration of quantum dot devices by selective area epitaxy	en_US
dc.type	Conference Proceeding
utslib.for	020504 Photonics, Optoelectronics and Optical Communications	en_US
utslib.for	1007 Nanotechnology	en_US
dc.location.activity	Brisbane, Australia	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US

Abstract:

The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide. © 2006 IEEE.

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http://hdl.handle.net/10453/2912