Optical properties of manganese doped wide band gap ZnS and ZnO
- Publication Type:
- Journal Article
- Optical Materials, 2009, 31 (12), pp. 1768 - 1771
- Issue Date:
Copyright Clearance Process
- Recently Added
- In Progress
- Closed Access
This item is closed access and not available.
Optical properties of ZnMnO layers grown at low temperature by Atomic Layer Deposition and Metalorganic Vapor Phase Epitaxy are discussed and compared to results obtained for ZnMnS samples. Present results suggest a double valence of Mn ions in ZnO lattice. Strong absorption, with onset at about 2.1 eV, is tentatively related to Mn 2+ to 3+ photoionization. Mechanism of emission deactivation in ZnMnO is discussed and is explained by the processes following the assumed Mn 2+ to 3+ recharging. © 2009 Elsevier B.V. All rights reserved.
Please use this identifier to cite or link to this item: