Optical properties of manganese doped wide band gap ZnS and ZnO

Godlewski, M; Wójcik-Głodowska, A; Guziewicz, E; Yatsunenko, S; Zakrzewski, A; Dumont, Y; Chikoidze, E; Phillips, MR

Optical properties of manganese doped wide band gap ZnS and ZnO

Godlewski, M Wójcik-Głodowska, A Guziewicz, E Yatsunenko, S Zakrzewski, A Dumont, Y Chikoidze, E Phillips, MR

Permalink

Publication Type:: Journal Article
Citation:: Optical Materials, 2009, 31 (12), pp. 1768 - 1771
Issue Date:: 2009-01-01

Closed Access

	Filename	Description	Size
	2012002412OK.pdf		269.02 kB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Godlewski, M	en_US
dc.contributor.author	Wójcik-Głodowska, A	en_US
dc.contributor.author	Guziewicz, E	en_US
dc.contributor.author	Yatsunenko, S	en_US
dc.contributor.author	Zakrzewski, A	en_US
dc.contributor.author	Dumont, Y	en_US
dc.contributor.author	Chikoidze, E	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.date.issued	2009-01-01	en_US
dc.identifier.citation	Optical Materials, 2009, 31 (12), pp. 1768 - 1771	en_US
dc.identifier.issn	0925-3467	en_US
dc.identifier.uri	http://hdl.handle.net/10453/29276
dc.description.abstract	Optical properties of ZnMnO layers grown at low temperature by Atomic Layer Deposition and Metalorganic Vapor Phase Epitaxy are discussed and compared to results obtained for ZnMnS samples. Present results suggest a double valence of Mn ions in ZnO lattice. Strong absorption, with onset at about 2.1 eV, is tentatively related to Mn 2+ to 3+ photoionization. Mechanism of emission deactivation in ZnMnO is discussed and is explained by the processes following the assumed Mn 2+ to 3+ recharging. © 2009 Elsevier B.V. All rights reserved.	en_US
dc.relation.ispartof	Optical Materials	en_US
dc.relation.isbasedon	10.1016/j.optmat.2008.12.031	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Optical properties of manganese doped wide band gap ZnS and ZnO	en_US
dc.type	Journal Article
utslib.citation.volume	12	en_US
utslib.citation.volume	31	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	12	en_US
pubs.publication-status	Published	en_US
pubs.volume	31	en_US

Abstract:

Optical properties of ZnMnO layers grown at low temperature by Atomic Layer Deposition and Metalorganic Vapor Phase Epitaxy are discussed and compared to results obtained for ZnMnS samples. Present results suggest a double valence of Mn ions in ZnO lattice. Strong absorption, with onset at about 2.1 eV, is tentatively related to Mn 2+ to 3+ photoionization. Mechanism of emission deactivation in ZnMnO is discussed and is explained by the processes following the assumed Mn 2+ to 3+ recharging. © 2009 Elsevier B.V. All rights reserved.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/29276