Hydrogenation of graphene and hydrogen diffusion behavior on graphene/graphane interface

Ao, Z; li, S

Hydrogenation of graphene and hydrogen diffusion behavior on graphene/graphane interface

Ao, Z li, S

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Publisher:: INTECH
Publication Type:: Chapter
Citation:: Graphene Simulation, 2011, pp. 53 - 74
Issue Date:: 2011-01

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Field	Value	Language
dc.contributor.author	Ao, Z	en_US
dc.contributor.author	li, S	en_US
dc.contributor.editor	Gong, DJR	en_US
dc.date.issued	2011-01	en_US
dc.identifier.citation	Graphene Simulation, 2011, pp. 53 - 74	en_US
dc.identifier.isbn	978-953-307-556-3	en_US
dc.identifier.uri	http://hdl.handle.net/10453/29992
dc.description.abstract	Hydrogenation of carbon materials has been attracting a wide range of interests as an application of hydrogen storage materials in hydrogen-powered automobile as well as a methodology to manipulate the electric properties of carbon materials. Graphene with unique electronic, thermal and mechanical properties has been investigated as one of the most promising candidates for the next generation of electronic materials (Geim, 2009). However, several major challenges have to be tackled before the widespread application of graphene. For example, the absence of a band gap in the electronic spectrum of intrinsic graphene and the Klein paradox as a consequence of the Dirac-type nature of the charge carriers (Novoselov et al., 2004; Rao et al., 2009). The most efficient way to overcome these problems is hydrogenation of graphene (Luo et al., 2009). The graphane (Sofo et al., 2007), a fully hydrogenated single layer of graphene, was suggested to possess the promising semiconductor properties with a band gap of around 3.5 eV theoretically. Very recently, Elias et al. (Elias et al, 2009) experimentally demonstrated the formation of graphane through the exposure of a graphene membrane to hydrogen plasma. Subsequently, the rate of hydrogenation process of multilayer graphene was found to strongly depend on the number of layers (Luo et al., 2009; Ryu et al., 2008). These discoveries open important perspectives for the application of graphene-based devices because the electronic gap in those graphanes could be controlled by the degree of hydrogenation (Elias et al., 2009; Zhou et al., 2009).	en_US
dc.publisher	INTECH	en_US
dc.relation.ispartof	Graphene Simulation	en_US
dc.title	Hydrogenation of graphene and hydrogen diffusion behavior on graphene/graphane interface	en_US
dc.type	Chapter
utslib.location	USA	en_US
utslib.for	0912 Materials Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.consider-herdc	false	en_US
pubs.place-of-publication	USA	en_US

Abstract:

Hydrogenation of carbon materials has been attracting a wide range of interests as an application of hydrogen storage materials in hydrogen-powered automobile as well as a methodology to manipulate the electric properties of carbon materials. Graphene with unique electronic, thermal and mechanical properties has been investigated as one of the most promising candidates for the next generation of electronic materials (Geim, 2009). However, several major challenges have to be tackled before the widespread application of graphene. For example, the absence of a band gap in the electronic spectrum of intrinsic graphene and the Klein paradox as a consequence of the Dirac-type nature of the charge carriers (Novoselov et al., 2004; Rao et al., 2009). The most efficient way to overcome these problems is hydrogenation of graphene (Luo et al., 2009). The graphane (Sofo et al., 2007), a fully hydrogenated single layer of graphene, was suggested to possess the promising semiconductor properties with a band gap of around 3.5 eV theoretically. Very recently, Elias et al. (Elias et al, 2009) experimentally demonstrated the formation of graphane through the exposure of a graphene membrane to hydrogen plasma. Subsequently, the rate of hydrogenation process of multilayer graphene was found to strongly depend on the number of layers (Luo et al., 2009; Ryu et al., 2008). These discoveries open important perspectives for the application of graphene-based devices because the electronic gap in those graphanes could be controlled by the degree of hydrogenation (Elias et al., 2009; Zhou et al., 2009).

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http://hdl.handle.net/10453/29992