Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method

Gogova, D; Petrov, PP; Buegler, M; Wagner, MR; Nenstiel, C; Callsen, G; Schmidbauer, M; Kucharski, R; Zajac, M; Dwilinski, R; Phillips, MR; Hoffmann, A; Fornari, R

Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method

Gogova, D Petrov, PP Buegler, M Wagner, MR Nenstiel, C Callsen, G

Schmidbauer, M Kucharski, R Zajac, M Dwilinski, R Phillips, MR

Hoffmann, A Fornari, R

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Publication Type:: Journal Article
Citation:: Journal of Applied Physics, 2013, 113 (20)
Issue Date:: 2013-01-01

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Field	Value	Language
dc.contributor.author	Gogova, D	en_US
dc.contributor.author	Petrov, PP	en_US
dc.contributor.author	Buegler, M	en_US
dc.contributor.author	Wagner, MR	en_US
dc.contributor.author	Nenstiel, C	en_US
dc.contributor.author	Callsen, G https://orcid.org/0000-0001-6390-3977	en_US
dc.contributor.author	Schmidbauer, M	en_US
dc.contributor.author	Kucharski, R	en_US
dc.contributor.author	Zajac, M	en_US
dc.contributor.author	Dwilinski, R	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Hoffmann, A	en_US
dc.contributor.author	Fornari, R	en_US
dc.date.issued	2013-01-01	en_US
dc.identifier.citation	Journal of Applied Physics, 2013, 113 (20)	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://hdl.handle.net/10453/30720
dc.description.abstract	We studied the structural and optical properties of state-of-the-art non-polar bulk GaN grown by the ammonothermal method. The investigated samples have an extremely low dislocation density (DD) of less than 5 × 104cm-2, which results in very narrow high-resolution x-ray rocking curves. The a and c lattice parameters of these stress-free GaN samples were precisely determined by using an x-ray diffraction technique based on the modified Bond method. The obtained values are compared to the lattice parameters of free-standing GaN from different methods and sources. The observed differences are discussed in terms of free-electron concentrations, point defects, and DD. Micro Raman spectroscopy revealed a very narrow phonon linewidth and negligible built-in strain in accordance with the high-resolution x-ray diffraction data. The optical transitions were investigated by cathodoluminescence measurements. The analysis of the experimental data clearly demonstrates the excellent crystalline perfection of ammonothermal GaN material and its potential for fabrication of non-polar substrates for homoepitaxial growth of GaN based device structures. © 2013 AIP Publishing LLC.	en_US
dc.relation.ispartof	Journal of Applied Physics	en_US
dc.relation.isbasedon	10.1063/1.4807581	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method	en_US
dc.type	Journal Article
utslib.citation.volume	20	en_US
utslib.citation.volume	113	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	01 Mathematical Sciences	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
pubs.organisational-group	/University of Technology Sydney/Students
utslib.copyright.status	open_access
pubs.issue	20	en_US
pubs.publication-status	Published	en_US
pubs.volume	113	en_US

Abstract:

We studied the structural and optical properties of state-of-the-art non-polar bulk GaN grown by the ammonothermal method. The investigated samples have an extremely low dislocation density (DD) of less than 5 × 104cm-2, which results in very narrow high-resolution x-ray rocking curves. The a and c lattice parameters of these stress-free GaN samples were precisely determined by using an x-ray diffraction technique based on the modified Bond method. The obtained values are compared to the lattice parameters of free-standing GaN from different methods and sources. The observed differences are discussed in terms of free-electron concentrations, point defects, and DD. Micro Raman spectroscopy revealed a very narrow phonon linewidth and negligible built-in strain in accordance with the high-resolution x-ray diffraction data. The optical transitions were investigated by cathodoluminescence measurements. The analysis of the experimental data clearly demonstrates the excellent crystalline perfection of ammonothermal GaN material and its potential for fabrication of non-polar substrates for homoepitaxial growth of GaN based device structures. © 2013 AIP Publishing LLC.

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