Effects of excitation density on cathodoluminescence from GaN

Kucheyev, SO; Toth, M; Phillips, MR; Williams, JS; Jagadish, C

Effects of excitation density on cathodoluminescence from GaN

Kucheyev, SO Toth, M

Phillips, MR

Williams, JS Jagadish, C

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Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2001, 79 (14), pp. 2154 - 2156
Issue Date:: 2001-10-01

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Field	Value	Language
dc.contributor.author	Kucheyev, SO	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Williams, JS	en_US
dc.contributor.author	Jagadish, C	en_US
dc.date.issued	2001-10-01	en_US
dc.identifier.citation	Applied Physics Letters, 2001, 79 (14), pp. 2154 - 2156	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/3196
dc.description.abstract	Wurtzite GaN epilayers are studied by cathodoluminescence (CL) spectroscopy. Results show that the intensities of donor-acceptor pair (DAP) and yellow luminescence (YL) peaks sublinearly depend on excitation density, presumably, due to saturation effects. The intensity of near-gap emission, however, exhibits a superlinear dependence on electron-beam excitation. In contrast to photoluminescence measurements, CL studies of GaN are usually performed in a regime with a strongly nonlinear dependence of luminescence intensities on excitation due to a large difference in carrier generation rates for these two techniques. As a result, the ratios of near-gap to YL and DAP emission intensities strongly depend on electron-beam current. Moreover, electron-beam spot size (i.e., beam focusing) dramatically affects CL intensity. An understanding of such saturation effects is necessary for a correct interpretation of CL spectra from GaN. © 2001 American Institute of Physics.	en_US
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.1408273	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Effects of excitation density on cathodoluminescence from GaN	en_US
dc.type	Journal Article
utslib.citation.volume	14	en_US
utslib.citation.volume	79	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	closed_access
pubs.issue	14	en_US
pubs.publication-status	Published	en_US
pubs.volume	79	en_US

Abstract:

Wurtzite GaN epilayers are studied by cathodoluminescence (CL) spectroscopy. Results show that the intensities of donor-acceptor pair (DAP) and yellow luminescence (YL) peaks sublinearly depend on excitation density, presumably, due to saturation effects. The intensity of near-gap emission, however, exhibits a superlinear dependence on electron-beam excitation. In contrast to photoluminescence measurements, CL studies of GaN are usually performed in a regime with a strongly nonlinear dependence of luminescence intensities on excitation due to a large difference in carrier generation rates for these two techniques. As a result, the ratios of near-gap to YL and DAP emission intensities strongly depend on electron-beam current. Moreover, electron-beam spot size (i.e., beam focusing) dramatically affects CL intensity. An understanding of such saturation effects is necessary for a correct interpretation of CL spectra from GaN. © 2001 American Institute of Physics.

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http://hdl.handle.net/10453/3196