Depth-resolved cathodoluminescence microanalysis of near-edge emission in III-nitride thin films

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Journal Article
Journal of Applied Physics, 2001, 89 (6), pp. 3535 - 3537
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We describe an approach to assess the quality of III-nitride thin films using depth-resolved cathodoluminescence (CL) microanalysis. In this procedure, the depth-resolved peak shift due to self-absorption of the near-edge CL emission is calculated using Monte Carlo simulation techniques and compared with measured peak shift values. A discrepancy between the experimental and modeled data indicates the presence of an exciton peak shift due to strain, near-edge defects, and alloy fluctuation. Depth-resolved peak shift analysis of the near-edge CL from an undoped 700 nm thick Al0.057Ga0.943N film grown on a (0001) Al2O3substrate is presented to demonstrate the utility of the method. © 2001 American Institute of Physics.
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