Depth-resolved cathodoluminescence microanalysis of near-edge emission in III-nitride thin films

Gelhausen, O; Phillips, MR; Toth, M

Depth-resolved cathodoluminescence microanalysis of near-edge emission in III-nitride thin films

Gelhausen, O Phillips, MR

Toth, M

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Publication Type:: Journal Article
Citation:: Journal of Applied Physics, 2001, 89 (6), pp. 3535 - 3537
Issue Date:: 2001-03-15

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Field	Value	Language
dc.contributor.author	Gelhausen, O	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.date.issued	2001-03-15	en_US
dc.identifier.citation	Journal of Applied Physics, 2001, 89 (6), pp. 3535 - 3537	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://hdl.handle.net/10453/3203
dc.description.abstract	We describe an approach to assess the quality of III-nitride thin films using depth-resolved cathodoluminescence (CL) microanalysis. In this procedure, the depth-resolved peak shift due to self-absorption of the near-edge CL emission is calculated using Monte Carlo simulation techniques and compared with measured peak shift values. A discrepancy between the experimental and modeled data indicates the presence of an exciton peak shift due to strain, near-edge defects, and alloy fluctuation. Depth-resolved peak shift analysis of the near-edge CL from an undoped 700 nm thick Al0.057Ga0.943N film grown on a (0001) Al2O3 substrate is presented to demonstrate the utility of the method. © 2001 American Institute of Physics.	en_US
dc.relation.ispartof	Journal of Applied Physics	en_US
dc.relation.isbasedon	10.1063/1.1350619	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Depth-resolved cathodoluminescence microanalysis of near-edge emission in III-nitride thin films	en_US
dc.type	Journal Article
utslib.citation.volume	6	en_US
utslib.citation.volume	89	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	01 Mathematical Sciences	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	closed_access
pubs.issue	6	en_US
pubs.publication-status	Published	en_US
pubs.volume	89	en_US

Abstract:

We describe an approach to assess the quality of III-nitride thin films using depth-resolved cathodoluminescence (CL) microanalysis. In this procedure, the depth-resolved peak shift due to self-absorption of the near-edge CL emission is calculated using Monte Carlo simulation techniques and compared with measured peak shift values. A discrepancy between the experimental and modeled data indicates the presence of an exciton peak shift due to strain, near-edge defects, and alloy fluctuation. Depth-resolved peak shift analysis of the near-edge CL from an undoped 700 nm thick Al0.057Ga0.943N film grown on a (0001) Al2O3 substrate is presented to demonstrate the utility of the method. © 2001 American Institute of Physics.

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