Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system

Publication Type:
Journal Article
Citation:
Journal of Semiconductors, 2011, 32 (1)
Issue Date:
2011-01-01
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We demonstrate the ability of a combined scanning electron microscope and cathodoluminescence (CL) spectral mapping system to provide important spatially resolved information. The degree of inhomogeneity in spectral output across a multi-quantum well sample is measured using the SEM-CL system as well as measuring the efficiency roll-off with increasing carrier concentration. The effects of low energy electron beam modification on the InGaN/GaN multi quantum wells have also been characterized.
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