Tailoring deep level surface defects in ZnO nanorods for high sensitivity ammonia gas sensing

Anantachaisilp, S; Smith, SM; Ton-That, C; Osotchan, T; Moon, AR; Phillips, MR

Tailoring deep level surface defects in ZnO nanorods for high sensitivity ammonia gas sensing

Anantachaisilp, S Smith, SM Ton-That, C

Osotchan, T Moon, AR

Phillips, MR

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Publication Type:: Journal Article
Citation:: Journal of Physical Chemistry C, 2014, 118 (46), pp. 27150 - 27156
Issue Date:: 2014-01-01

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Field	Value	Language
dc.contributor.author	Anantachaisilp, S	en_US
dc.contributor.author	Smith, SM	en_US
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739	en_US
dc.contributor.author	Osotchan, T	en_US
dc.contributor.author	Moon, AR https://orcid.org/0000-0002-7464-8673	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.date.issued	2014-01-01	en_US
dc.identifier.citation	Journal of Physical Chemistry C, 2014, 118 (46), pp. 27150 - 27156	en_US
dc.identifier.issn	1932-7447	en_US
dc.identifier.uri	http://hdl.handle.net/10453/32777
dc.description.abstract	© 2014 American Chemical Society. The influence of deep level surface defects on electrical and gas sensing properties of ZnO nanorods NH3(g) sensors was studied. ZnO nanorods 50-60 nm in diameter were synthesized via low-temperature hydrothermal growth at 90°C on sapphire substrates. The as-grown nanorods exhibited a cathodoluminescence (CL) peak centered at 1.90 eV (YL), attributed to LiZn deep acceptors or O interstitials. Subsequent annealing in O2 at 1 atm and Zn vapor at 650°C produced broad CL peaks centered at 1.70 eV (RL) and 2.44 eV (GL), respectively. The RL and GL have been ascribed to acceptor-like VZn and donor-like VO related centers, respectively. Electrical and gas sensing measurements established that the NH3 gas response sensitivity was 22.6 for O2 anneal (RL), 1.4 for Zn vapor anneal (GL), and 4.1 for the as-grown (YL) samples. Additionally, treatment in H-plasma quenched the RL and inverted the NH3 electrical response due to the incorporation of H donors. Changes in the gas sensing response are explained by a shift in the position of the ZnO Fermi level relative to the chemical potential of NH3 gas due to the creation of near surface donor or acceptors. These data confirm that ZnO nanorods arrays can be tailored to detect specific gas species. (Chemical Equation Presented).	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP0986951
dc.relation.ispartof	Journal of Physical Chemistry C	en_US
dc.relation.isbasedon	10.1021/jp5085857	en_US
dc.subject.classification	Physical Chemistry	en_US
dc.title	Tailoring deep level surface defects in ZnO nanorods for high sensitivity ammonia gas sensing	en_US
dc.type	Journal Article
utslib.citation.volume	46	en_US
utslib.citation.volume	118	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Provost
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	46	en_US
pubs.publication-status	Published	en_US
pubs.volume	118	en_US

Abstract:

© 2014 American Chemical Society. The influence of deep level surface defects on electrical and gas sensing properties of ZnO nanorods NH3(g) sensors was studied. ZnO nanorods 50-60 nm in diameter were synthesized via low-temperature hydrothermal growth at 90°C on sapphire substrates. The as-grown nanorods exhibited a cathodoluminescence (CL) peak centered at 1.90 eV (YL), attributed to LiZn deep acceptors or O interstitials. Subsequent annealing in O2 at 1 atm and Zn vapor at 650°C produced broad CL peaks centered at 1.70 eV (RL) and 2.44 eV (GL), respectively. The RL and GL have been ascribed to acceptor-like VZn and donor-like VO related centers, respectively. Electrical and gas sensing measurements established that the NH3 gas response sensitivity was 22.6 for O2 anneal (RL), 1.4 for Zn vapor anneal (GL), and 4.1 for the as-grown (YL) samples. Additionally, treatment in H-plasma quenched the RL and inverted the NH3 electrical response due to the incorporation of H donors. Changes in the gas sensing response are explained by a shift in the position of the ZnO Fermi level relative to the chemical potential of NH3 gas due to the creation of near surface donor or acceptors. These data confirm that ZnO nanorods arrays can be tailored to detect specific gas species. (Chemical Equation Presented).

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http://hdl.handle.net/10453/32777