Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO

Chan, KS; Ton-That, C; Vines, L; Choi, S; Phillips, MR; Svensson, BG; Jagadish, C; Wong-Leung, J

Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO

Chan, KS Ton-That, C

Vines, L Choi, S Phillips, MR

Svensson, BG Jagadish, C Wong-Leung, J

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Publication Type:: Journal Article
Citation:: Journal of Physics D: Applied Physics, 2014, 47 (34)
Issue Date:: 2014-08-30

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Field	Value	Language
dc.contributor.author	Chan, KS	en_US
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739	en_US
dc.contributor.author	Vines, L	en_US
dc.contributor.author	Choi, S	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Svensson, BG	en_US
dc.contributor.author	Jagadish, C	en_US
dc.contributor.author	Wong-Leung, J	en_US
dc.date.issued	2014-08-30	en_US
dc.identifier.citation	Journal of Physics D: Applied Physics, 2014, 47 (34)	en_US
dc.identifier.issn	0022-3727	en_US
dc.identifier.uri	http://hdl.handle.net/10453/32781
dc.description.abstract	The evolution of luminescence properties and voids formation with respect to annealing temperature in H implanted ZnO was investigated by depth-resolved cathodoluminescence spectroscopy (DRCLS), transmission electron microscopy and secondary ion mass spectrometry (SIMS). The annealing temperature is found to induce noticeable changes to the shape, size and empty volume density of the cavities. DRCLS results also reveal that the green emission is influenced by different annealing temperatures. In particular, the 600 °C anneal produces a strong quenching of the green emission in the implanted region, while after the 800 °C anneal a significant enhancement near the surface is observed. The annealing at 600 °C also results in an uncommon violet emission at ∼3.1 eV that is not observed after a higher annealing temperature. A clear correlation between the violet emission, vacancies and Li is revealed from comparison between the DRCLS intensities and SIMS data. © 2014 IOP Publishing Ltd.	en_US
dc.relation.ispartof	Journal of Physics D: Applied Physics	en_US
dc.relation.isbasedon	10.1088/0022-3727/47/34/342001	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO	en_US
dc.type	Journal Article
utslib.citation.volume	34	en_US
utslib.citation.volume	47	en_US
utslib.for	020404 Electronic and Magnetic Properties of Condensed Matter; Superconductivity	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
pubs.organisational-group	/University of Technology Sydney/Students
utslib.copyright.status	closed_access
pubs.issue	34	en_US
pubs.publication-status	Published	en_US
pubs.volume	47	en_US

Abstract:

The evolution of luminescence properties and voids formation with respect to annealing temperature in H implanted ZnO was investigated by depth-resolved cathodoluminescence spectroscopy (DRCLS), transmission electron microscopy and secondary ion mass spectrometry (SIMS). The annealing temperature is found to induce noticeable changes to the shape, size and empty volume density of the cavities. DRCLS results also reveal that the green emission is influenced by different annealing temperatures. In particular, the 600 °C anneal produces a strong quenching of the green emission in the implanted region, while after the 800 °C anneal a significant enhancement near the surface is observed. The annealing at 600 °C also results in an uncommon violet emission at ∼3.1 eV that is not observed after a higher annealing temperature. A clear correlation between the violet emission, vacancies and Li is revealed from comparison between the DRCLS intensities and SIMS data. © 2014 IOP Publishing Ltd.

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http://hdl.handle.net/10453/32781