Shallow carrier traps in hydrothermal ZnO crystals

Ton-That, C; Lem, LLC; Phillips, MR; Reisdorffer, F; Mevellec, J; Nguyen, TP; Nenstiel, C; Hoffmann, A

Shallow carrier traps in hydrothermal ZnO crystals

Ton-That, C

Lem, LLC Phillips, MR

Reisdorffer, F Mevellec, J Nguyen, TP Nenstiel, C Hoffmann, A

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Publication Type:: Journal Article
Citation:: New Journal of Physics, 2014, 16
Issue Date:: 2014-01-01

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Field	Value	Language
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739	en_US
dc.contributor.author	Lem, LLC	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Reisdorffer, F	en_US
dc.contributor.author	Mevellec, J	en_US
dc.contributor.author	Nguyen, TP	en_US
dc.contributor.author	Nenstiel, C	en_US
dc.contributor.author	Hoffmann, A	en_US
dc.date.issued	2014-01-01	en_US
dc.identifier.citation	New Journal of Physics, 2014, 16	en_US
dc.identifier.issn	1367-2630	en_US
dc.identifier.uri	http://hdl.handle.net/10453/32783
dc.description.abstract	Native and hydrogen-plasma induced shallow traps in hydrothermally grown ZnO crystals have been investigated by charge-based deep level transient spectroscopy, photoluminescence and cathodoluminescence microanalysis. The as-grown ZnO exhibits a trap state at 23 meV, while H-doped ZnO produced by plasma doping shows two levels at 22 meV and 11 meV below the conduction band. As-grown ZnO displays the expected thermal decay of bound excitons with increasing temperature from 7 K, while we observed an anomalous behaviour of the excitonic emission in H-doped ZnO, in which its intensity increases with increasing temperature in the range 140-300 K. Based on a multitude of optical results, a qualitative model is developed which explains the Y line structural defects, which act as an electron trap with an activation energy of 11 meV, being responsible for the anomalous temperature-dependent cathodoluminescence of H-doped ZnO. © 2014 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.	en_US
dc.relation.ispartof	New Journal of Physics	en_US
dc.relation.isbasedon	10.1088/1367-2630/16/8/083040	en_US
dc.subject.classification	Fluids & Plasmas	en_US
dc.title	Shallow carrier traps in hydrothermal ZnO crystals	en_US
dc.type	Journal Article
utslib.citation.volume	16	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	open_access
pubs.publication-status	Published	en_US
pubs.volume	16	en_US

Abstract:

Native and hydrogen-plasma induced shallow traps in hydrothermally grown ZnO crystals have been investigated by charge-based deep level transient spectroscopy, photoluminescence and cathodoluminescence microanalysis. The as-grown ZnO exhibits a trap state at 23 meV, while H-doped ZnO produced by plasma doping shows two levels at 22 meV and 11 meV below the conduction band. As-grown ZnO displays the expected thermal decay of bound excitons with increasing temperature from 7 K, while we observed an anomalous behaviour of the excitonic emission in H-doped ZnO, in which its intensity increases with increasing temperature in the range 140-300 K. Based on a multitude of optical results, a qualitative model is developed which explains the Y line structural defects, which act as an electron trap with an activation energy of 11 meV, being responsible for the anomalous temperature-dependent cathodoluminescence of H-doped ZnO. © 2014 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.

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http://hdl.handle.net/10453/32783