Contact-induced defect propagation in ZnO

Bradby, JE; Kucheyev, SO; Williams, JS; Jagadish, C; Swain, MV; Munroe, P; Phillips, MR

Contact-induced defect propagation in ZnO

Bradby, JE Kucheyev, SO Williams, JS Jagadish, C Swain, MV Munroe, P Phillips, MR

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Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2002, 80 (24), pp. 4537 - 4539
Issue Date:: 2002-06-17

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Field	Value	Language
dc.contributor.author	Bradby, JE	en_US
dc.contributor.author	Kucheyev, SO	en_US
dc.contributor.author	Williams, JS	en_US
dc.contributor.author	Jagadish, C	en_US
dc.contributor.author	Swain, MV	en_US
dc.contributor.author	Munroe, P	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.date.issued	2002-06-17	en_US
dc.identifier.citation	Applied Physics Letters, 2002, 80 (24), pp. 4537 - 4539	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/433
dc.identifier.uri	http://hdl.handle.net/10453/32859
dc.description.abstract	Contact-induced damage has been studied in single-crystal (wurtzite) ZnO by cross-sectional transmission electron microscopy (XTEM) and scanning cathodoluminescence (CL) monochromatic imaging. XTEM reveals that the prime deformation mechanism in ZnO is the nucleation of slip on both the basal and pyramidal planes. Some indication of dislocation pinning was observed on the basal slip planes. No evidence of either a phase transformation or cracking was observed by XTEM in samples loaded up to 50 mN with an ∼4.2 μm radius spherical indenter. CL imaging reveals a quenching of near-gap emission by deformation-produced defects.Both XTEM and CL show that this comparatively soft material exhibits extensive deformation damage and that defects can propagate well beyond the deformed volume under contact. Results of this study have significant implications for the extent of contact-induced damage during fabrication of ZnO-based (opto)electronic devices. © 2002 American Institute of Physics.	en_US
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.1486264	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Contact-induced defect propagation in ZnO	en_US
dc.type	Journal Article
utslib.citation.volume	24	en_US
utslib.citation.volume	80	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	24	en_US
pubs.publication-status	Published	en_US
pubs.volume	80	en_US

Abstract:

Contact-induced damage has been studied in single-crystal (wurtzite) ZnO by cross-sectional transmission electron microscopy (XTEM) and scanning cathodoluminescence (CL) monochromatic imaging. XTEM reveals that the prime deformation mechanism in ZnO is the nucleation of slip on both the basal and pyramidal planes. Some indication of dislocation pinning was observed on the basal slip planes. No evidence of either a phase transformation or cracking was observed by XTEM in samples loaded up to 50 mN with an ∼4.2 μm radius spherical indenter. CL imaging reveals a quenching of near-gap emission by deformation-produced defects.Both XTEM and CL show that this comparatively soft material exhibits extensive deformation damage and that defects can propagate well beyond the deformed volume under contact. Results of this study have significant implications for the extent of contact-induced damage during fabrication of ZnO-based (opto)electronic devices. © 2002 American Institute of Physics.

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http://hdl.handle.net/10453/433