Increased carrier generation rate in Si nanocrystals in SiO<inf>2</inf> investigated by induced absorption

De Boer, WDAM; Trinh, MT; Timmerman, D; Schins, JM; Siebbeles, LDA; Gregorkiewicz, T

Increased carrier generation rate in Si nanocrystals in SiO<inf>2</inf> investigated by induced absorption

De Boer, WDAM Trinh, MT Timmerman, D Schins, JM Siebbeles, LDA Gregorkiewicz, T

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Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2011, 99 (5)
Issue Date:: 2011-08-01

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Field	Value	Language
dc.contributor.author	De Boer, WDAM	en_US
dc.contributor.author	Trinh, MT	en_US
dc.contributor.author	Timmerman, D	en_US
dc.contributor.author	Schins, JM	en_US
dc.contributor.author	Siebbeles, LDA	en_US
dc.contributor.author	Gregorkiewicz, T	en_US
dc.date.issued	2011-08-01	en_US
dc.identifier.citation	Applied Physics Letters, 2011, 99 (5)	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/34508
dc.description.abstract	We report on investigations of optical generation of carriers in Si nanocrystals embedded in SiO2 matrix by time-resolved induced absorption technique. Results obtained for excitation below and above twice the bandgap energy h 2Eg and h 2Eg show very similar decay characteristics (within resolution ≈ 100 fs). When intensity of the signal is correlated to number of generated excitons, it is found that for the high photon energy excitation, carrier generation rate is considerably enhanced. These results are discussed in terms of carrier multiplication reported previously for semiconductor nanocrystals and photoluminescence quantum yield measurements for similar materials. © 2011 American Institute of Physics.	en_US
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.3622308	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Increased carrier generation rate in Si nanocrystals in SiO<inf>2</inf> investigated by induced absorption	en_US
dc.type	Journal Article
utslib.citation.volume	5	en_US
utslib.citation.volume	99	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access
pubs.issue	5	en_US
pubs.publication-status	Published	en_US
pubs.volume	99	en_US

Abstract:

We report on investigations of optical generation of carriers in Si nanocrystals embedded in SiO2 matrix by time-resolved induced absorption technique. Results obtained for excitation below and above twice the bandgap energy h 2Eg and h 2Eg show very similar decay characteristics (within resolution ≈ 100 fs). When intensity of the signal is correlated to number of generated excitons, it is found that for the high photon energy excitation, carrier generation rate is considerably enhanced. These results are discussed in terms of carrier multiplication reported previously for semiconductor nanocrystals and photoluminescence quantum yield measurements for similar materials. © 2011 American Institute of Physics.

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http://hdl.handle.net/10453/34508