Non-stoichiometry and non-homogeneity in InN

Publisher:
Wiley VCH
Publication Type:
Journal Article
Citation:
Physica Status Solidi C, 2005, 2 (7), pp. 2263 - 2266
Issue Date:
2005-01
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It is shown that the wide variation of apparent band-gap observed for thin films nominally referred to as InN is strongly influenced by variations in the nitrogen:indium stoichiometry. inN samples grown by remote plasma enhanced chemical vapour deposition show a change in band-gap between 1.8 and 1.0eV that is not due to the Moss-Burstein effetc, oxygen inclusion or quantumn size effects, but for which changes in the growth temperature result in a strong change in stoichiometry. Material non-homogeneity and non-stoichiometry appear to be general rpoblems for inN growth. Excess nitrogen can be present at very high levels and indium rich materials is also found. This work shwos that the extent of the Moss-Burstein effects will have to be reassessed for InN.
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