Profiling of light emission of GaN-based laser diodes with cathodoluminescence

Publication Type:
Journal Article
Citation:
Physica Status Solidi (A) Applications and Materials Science, 2006, 203 (7), pp. 1811 - 1814
Issue Date:
2006-05-01
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Cathodoluminescence is applied for evaluation of in-plane variations of light emission from GaN-based laser diode structures. We demonstrate that potential fluctuations affect significantly emission of laser diodes for e-beam currents above thresholds for a stimulated emission. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.
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