Nitride film growth morphology using remote plasma enhanced chemical vapor deposition

Wiley - V C H Verlag GmbH & Co. KGaA
Publication Type:
Journal Article
Physica Status Solidi C, 2007, 4 (7), pp. 2285 - 2288
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Gallium nitride and indium nitride films have been grown by remote plasma enhanced chemical vapor deposition (RPECVD) at temperatures between 570 and 650 °C for GaN and between 350 and 570 °C for InN on different substrates. For GaN vast improvements in film morphology and quality have resulted from reductions in background impurities when compared to previous reports. Epitaxial material can now be grown at 650 °C under optimized growth conditions. Columnar growth still occurs for growth on some substrates, however film coalescence is observed when using appropriate buffer layers and epitaxial growth can also be observed. High resolution SEM images show examples of this. The root-mean-square surface roughness of epitaxial samples, as measured using atomic force microscopy, shows values of as little as 10 Angstroms. While X-ray diffraction shows that these surfaces are not amorphous but have a strong (0001) preferred axis with FWHM limited by instrumental effects to (2) 0.085 degrees.
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