Luminescent properties of wide bandgap materials at room temperature

Godlewski, M; Szmidt, J; Olszyna, A; Werbowy, A; Łusakowska, E; Phillips, MR; Goldys, EM; Sokolowska, A

Luminescent properties of wide bandgap materials at room temperature

Godlewski, M Szmidt, J Olszyna, A Werbowy, A Łusakowska, E Phillips, MR

Goldys, EM Sokolowska, A

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Publication Type:: Journal Article
Citation:: Physica Status Solidi C: Conferences, 2004, 1 (2), pp. 213 - 218
Issue Date:: 2004-05-18

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Field	Value	Language
dc.contributor.author	Godlewski, M	en_US
dc.contributor.author	Szmidt, J	en_US
dc.contributor.author	Olszyna, A	en_US
dc.contributor.author	Werbowy, A	en_US
dc.contributor.author	Łusakowska, E	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Goldys, EM	en_US
dc.contributor.author	Sokolowska, A	en_US
dc.date.issued	2004-05-18	en_US
dc.identifier.citation	Physica Status Solidi C: Conferences, 2004, 1 (2), pp. 213 - 218	en_US
dc.identifier.issn	1610-1634	en_US
dc.identifier.uri	http://hdl.handle.net/10453/3566
dc.description.abstract	Properties of nanocrystalline thin films of selected nitrides are discussed as possible buffer materials for obtaining freestanding GaN wafers. These films are grown by impulse plasma deposition on silicon substrates. We demonstrate high smoothness of these films. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.	en_US
dc.relation.ispartof	Physica Status Solidi C: Conferences	en_US
dc.relation.isbasedon	10.1002/pssc.200303935	en_US
dc.title	Luminescent properties of wide bandgap materials at room temperature	en_US
dc.type	Journal Article
utslib.citation.volume	2	en_US
utslib.citation.volume	1	en_US
utslib.for	0206 Quantum Physics	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
dc.location.activity	Warsaw, POLAND
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	2	en_US
pubs.publication-status	Published	en_US
pubs.volume	1	en_US

Abstract:

Properties of nanocrystalline thin films of selected nitrides are discussed as possible buffer materials for obtaining freestanding GaN wafers. These films are grown by impulse plasma deposition on silicon substrates. We demonstrate high smoothness of these films. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/3566