Luminescent properties of wide bandgap materials at room temperature

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Journal Article
Physica Status Solidi C: Conferences, 2004, 1 (2), pp. 213 - 218
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Properties of nanocrystalline thin films of selected nitrides are discussed as possible buffer materials for obtaining freestanding GaN wafers. These films are grown by impulse plasma deposition on silicon substrates. We demonstrate high smoothness of these films. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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