Luminescent properties of wide bandgap materials at room temperature

Wiley VCH
Publication Type:
Journal Article
Physica Status Solidi C, 2004, 1 (2), pp. 213 - 218
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Properties of nanocrystalline thin films of selected nitrides are discussed as possible biffer materials for obtaining freestanding GaN wafers. These films are grown by impulse plasma deposition on silicon substrates. We demonstrate high smoothness of these films.
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