Luminescent properties of wide bandgap materials at room temperature

Publication Type:
Journal Article
Citation:
Physica Status Solidi C: Conferences, 2004, 1 (2), pp. 213 - 218
Issue Date:
2004-05-18
Full metadata record
Files in This Item:
Filename Description Size
Thumbnail2004001095.pdf976.59 kB
Adobe PDF
Properties of nanocrystalline thin films of selected nitrides are discussed as possible buffer materials for obtaining freestanding GaN wafers. These films are grown by impulse plasma deposition on silicon substrates. We demonstrate high smoothness of these films. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Please use this identifier to cite or link to this item: