Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

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Journal Article
Physica Status Solidi C: Conferences, 2005, 2 (3), pp. 1056 - 1059
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Effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discussed. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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