Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

Wiley VCH
Publication Type:
Journal Article
Physica Status Solidi C, 2005, 2 (3), pp. 1056 - 1059
Issue Date:
Full metadata record
Files in This Item:
Filename Description SizeFormat
2005003077.pdf890.46 kBAdobe PDF
Effects of n-type doping of GaN epilayers and InGaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discussed.
Please use this identifier to cite or link to this item: