Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

Godlewski, M; Ivanov, VY; Łusakowska, E; Boźek, R; Masojedovas, S; Juršénas, S; Kazlauskas, K; Žukauskas, A; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D

Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

Godlewski, M Ivanov, VY Łusakowska, E Boźek, R Masojedovas, S Juršénas, S Kazlauskas, K Žukauskas, A Goldys, EM Phillips, MR

Böttcher, T Figge, S Hommel, D

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Publication Type:: Journal Article
Citation:: Physica Status Solidi C: Conferences, 2005, 2 (3), pp. 1056 - 1059
Issue Date:: 2005-11-07

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Field	Value	Language
dc.contributor.author	Godlewski, M	en_US
dc.contributor.author	Ivanov, VY	en_US
dc.contributor.author	Łusakowska, E	en_US
dc.contributor.author	Boźek, R	en_US
dc.contributor.author	Masojedovas, S	en_US
dc.contributor.author	Juršénas, S	en_US
dc.contributor.author	Kazlauskas, K	en_US
dc.contributor.author	Žukauskas, A	en_US
dc.contributor.author	Goldys, EM	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Böttcher, T	en_US
dc.contributor.author	Figge, S	en_US
dc.contributor.author	Hommel, D	en_US
dc.date.issued	2005-11-07	en_US
dc.identifier.citation	Physica Status Solidi C: Conferences, 2005, 2 (3), pp. 1056 - 1059	en_US
dc.identifier.issn	1610-1634	en_US
dc.identifier.uri	http://hdl.handle.net/10453/3568
dc.description.abstract	Effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discussed. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.	en_US
dc.relation.ispartof	Physica Status Solidi C: Conferences	en_US
dc.relation.isbasedon	10.1002/pssc.200460619	en_US
dc.title	Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures	en_US
dc.type	Journal Article
utslib.citation.volume	3	en_US
utslib.citation.volume	2	en_US
utslib.for	0206 Quantum Physics	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
dc.location.activity	Warsaw, POLAND
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	3	en_US
pubs.publication-status	Published	en_US
pubs.volume	2	en_US

Abstract:

Effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discussed. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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http://hdl.handle.net/10453/3568