Localized chemical switching of the charge state of nitrogen-vacancy luminescence centers in diamond

Publication Type:
Journal Article
Citation:
Applied Physics Letters, 2014, 105 (6)
Issue Date:
2014-08-11
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We present a direct-write chemical technique for controlling the charge state of near-surface nitrogen vacancy centers (NVs) in diamond by surface fluorination. Fluorination of H-terminated diamond is realized by electron beam stimulated desorption of H 2 O in the presence of NF 3 and verified with environmental photoyield spectroscopy (EPYS) and photoluminescence (PL) spectroscopy. PL spectra of shallow NVs in H- and F-terminated nanodiamonds show the expected dependence of the NV charge state on their energetic position with respect to the Fermi-level. EPYS reveals a corresponding difference between the ionization potential of H- and F-terminated diamond. The electron beam fluorination process is highly localized and can be used to fluorinate H-terminated diamond, and to increase the population of negatively charged NV centers. © 2014 AIP Publishing LLC.
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