Localized chemical switching of the charge state of nitrogen-vacancy luminescence centers in diamond

Shanley, TW; Martin, AA; Aharonovich, I; Toth, M

Localized chemical switching of the charge state of nitrogen-vacancy luminescence centers in diamond

Shanley, TW Martin, AA

Aharonovich, I

Toth, M

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Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2014, 105 (6)
Issue Date:: 2014-08-11

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Field	Value	Language
dc.contributor.author	Shanley, TW	en_US
dc.contributor.author	Martin, AA https://orcid.org/0000-0003-2362-5524	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.date.issued	2014-08-11	en_US
dc.identifier.citation	Applied Physics Letters, 2014, 105 (6)	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/35829
dc.description.abstract	We present a direct-write chemical technique for controlling the charge state of near-surface nitrogen vacancy centers (NVs) in diamond by surface fluorination. Fluorination of H-terminated diamond is realized by electron beam stimulated desorption of H2O in the presence of NF3 and verified with environmental photoyield spectroscopy (EPYS) and photoluminescence (PL) spectroscopy. PL spectra of shallow NVs in H- and F-terminated nanodiamonds show the expected dependence of the NV charge state on their energetic position with respect to the Fermi-level. EPYS reveals a corresponding difference between the ionization potential of H- and F-terminated diamond. The electron beam fluorination process is highly localized and can be used to fluorinate H-terminated diamond, and to increase the population of negatively charged NV centers. © 2014 AIP Publishing LLC.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP140102721
dc.relation	http://purl.org/au-research/grants/arc/DE130100592
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.4883229	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Localized chemical switching of the charge state of nitrogen-vacancy luminescence centers in diamond	en_US
dc.type	Journal Article
utslib.citation.volume	6	en_US
utslib.citation.volume	105	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	open_access
pubs.issue	6	en_US
pubs.publication-status	Published	en_US
pubs.volume	105	en_US

Abstract:

We present a direct-write chemical technique for controlling the charge state of near-surface nitrogen vacancy centers (NVs) in diamond by surface fluorination. Fluorination of H-terminated diamond is realized by electron beam stimulated desorption of H2O in the presence of NF3 and verified with environmental photoyield spectroscopy (EPYS) and photoluminescence (PL) spectroscopy. PL spectra of shallow NVs in H- and F-terminated nanodiamonds show the expected dependence of the NV charge state on their energetic position with respect to the Fermi-level. EPYS reveals a corresponding difference between the ionization potential of H- and F-terminated diamond. The electron beam fluorination process is highly localized and can be used to fluorinate H-terminated diamond, and to increase the population of negatively charged NV centers. © 2014 AIP Publishing LLC.

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http://hdl.handle.net/10453/35829