Localized chemical switching of the charge state of nitrogen-vacancy luminescence centers in diamond

Publication Type:
Journal Article
Citation:
Applied Physics Letters, 2014, 105 (6)
Issue Date:
2014-08-11
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We present a direct-write chemical technique for controlling the charge state of near-surface nitrogen vacancy centers (NVs) in diamond by surface fluorination. Fluorination of H-terminated diamond is realized by electron beam stimulated desorption of H2O in the presence of NF3 and verified with environmental photoyield spectroscopy (EPYS) and photoluminescence (PL) spectroscopy. PL spectra of shallow NVs in H- and F-terminated nanodiamonds show the expected dependence of the NV charge state on their energetic position with respect to the Fermi-level. EPYS reveals a corresponding difference between the ionization potential of H- and F-terminated diamond. The electron beam fluorination process is highly localized and can be used to fluorinate H-terminated diamond, and to increase the population of negatively charged NV centers. © 2014 AIP Publishing LLC.
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