Relationship between sample morphology and carrier diffusion length in gan thin films

Godlewski, M; Goldys, EM; Phillips, M; Böttcher, T; Flgge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Wisniewski, P; Suski, T; Bockowski, M; Grzegory, I; Porowski, S

Relationship between sample morphology and carrier diffusion length in gan thin films

Godlewski, M Goldys, EM Phillips, M

Böttcher, T Flgge, S Hommel, D Czernecki, R Prystawko, P Leszczynski, M Perlin, P Wisniewski, P Suski, T Bockowski, M Grzegory, I Porowski, S

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Publication Type:: Journal Article
Citation:: Acta Physica Polonica A, 2002, 102 (4-5), pp. 627 - 632
Issue Date:: 2002-01-01

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Field	Value	Language
dc.contributor.author	Godlewski, M	en_US
dc.contributor.author	Goldys, EM	en_US
dc.contributor.author	Phillips, M https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Böttcher, T	en_US
dc.contributor.author	Flgge, S	en_US
dc.contributor.author	Hommel, D	en_US
dc.contributor.author	Czernecki, R	en_US
dc.contributor.author	Prystawko, P	en_US
dc.contributor.author	Leszczynski, M	en_US
dc.contributor.author	Perlin, P	en_US
dc.contributor.author	Wisniewski, P	en_US
dc.contributor.author	Suski, T	en_US
dc.contributor.author	Bockowski, M	en_US
dc.contributor.author	Grzegory, I	en_US
dc.contributor.author	Porowski, S	en_US
dc.date.issued	2002-01-01	en_US
dc.identifier.citation	Acta Physica Polonica A, 2002, 102 (4-5), pp. 627 - 632	en_US
dc.identifier.issn	0587-4246	en_US
dc.identifier.uri	http://hdl.handle.net/10453/363
dc.description.abstract	Scanning and spot-mode cathodoluminescence investigations of homo-and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.	en_US
dc.relation.ispartof	Acta Physica Polonica A	en_US
dc.relation.isbasedon	10.12693/APhysPolA.102.627	en_US
dc.subject.classification	General Physics	en_US
dc.title	Relationship between sample morphology and carrier diffusion length in gan thin films	en_US
dc.type	Journal Article
utslib.citation.volume	4-5	en_US
utslib.citation.volume	102	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	01 Mathematical Sciences	en_US
utslib.for	02 Physical Sciences	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	open_access
pubs.issue	4-5	en_US
pubs.publication-status	Published	en_US
pubs.volume	102	en_US

Abstract:

Scanning and spot-mode cathodoluminescence investigations of homo-and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/363