Relationship between sample morphology and carrier diffusion length in GaN thin films.

Publisher:
Polish Academy of Science
Publication Type:
Journal Article
Citation:
Acta Physica Polonica A, 2002, 102 (4-5), pp. 627 - 630
Issue Date:
2002-01
Full metadata record
Files in This Item:
Filename Description Size
Thumbnail2006009763.pdf487.82 kB
Adobe PDF
Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.
Please use this identifier to cite or link to this item: